Chemical State Analysis of Sn–Sb–O Solid Surfaces by Auger Electron Spectroscopy: Differentiation of Sb(III) and Sb(V)

1992 ◽  
Vol 65 (10) ◽  
pp. 2709-2714 ◽  
Author(s):  
Masaharu Komiyama ◽  
Mikio Yoshii ◽  
Yoshisada Ogino ◽  
Takehiko Ono
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical State ◽  
Solid Surfaces ◽  
State Analysis

Chemical State Analysis of Grain Boundaries in ZnO Varistors by Auger Electron Spectroscopy

1993 ◽  
Vol 105 (1) ◽  
pp. 36-43 ◽  
Author(s):  
Shigeru Tanaka ◽  
Chiyoshi Akita ◽  
Naoki Ohashi ◽  
Jun Kawai ◽  
Hajime Haneda ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Grain Boundaries ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical State ◽  
Zno Varistors ◽  
State Analysis

Auger Electron Emission Micrography and Microanalysis of Solid Surfaces

1973 ◽  
Vol 17 ◽  
pp. 498-508
Author(s):  
K. Hayakawa ◽  
H. Okano ◽  
S. Kawase ◽  
S. Yamamoto
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Energy ◽  
Electron Emission ◽  
Electron Spectroscopy ◽  
Electron Probe ◽  
Auger Electron ◽  
Solid Surfaces ◽  
Energy Analyzer ◽  
Cylindrical Mirror ◽  
Spectroscopy Studies

AbstractAn electron probe Auger emission microanalyzer has been constructed. The instrument is composed of an electromagnetic focussing primary probe column and a cylindrical mirror electron energy analyzer. By using this instrument, Auger electron spectroscopy studies have been carried out in the modes of both emission microanalysis and emission micrograph. The feasibility o£ this method is investigated through its application to the study of iron surface.

Stability of Sulfide Passivated Gallium Arsenide Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
J. S. Solomon ◽  
L. Petry ◽  
S. R. Smith
Keyword(s):  
Gallium Arsenide ◽  
Surface Chemistry ◽  
Auger Electron Spectroscopy ◽  
Barrier Height ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical State ◽  
Ambient Conditions ◽  
Ambient Exposure ◽  
Barrier Heights

ABSTRACTThe chemical state of (NH4)2S treated (100)GaAs surfaces exposed to ambient conditions for several days was correlated with barrier height measurements. Surface chemistry was characterized by Auger electron spectroscopy and barrier heights were calculated from C-V measurements obtained with a Hg probe. Results show that surfaces are chemically and electrically unstable for several hours following the sulfide treatment. The chemical and electrical states continually changed during ambient exposure up to 300 hours. Although strictly speaking, the surfaces were not passivated, the presence of sulfur did inhibit the formation of Ga and As oxides and the incorporation of carbon. In addition, stable, low barrier heights were observed after ambient exposure for several hours. Barrier heights from C-V measurements using deposited Au and Al contacts were compared to the barrier heights obtained with a Hg probe.

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