scholarly journals Electrochemical Behavior of p-Type Indium Selenide Single Crystal Electrodes in Dark and under Illumination

1986 ◽  
Vol 59 (2) ◽  
pp. 599-605 ◽  
Author(s):  
Kohei Uosaki ◽  
Susumu Kaneko ◽  
Hideaki Kita ◽  
A. Chevy
Keyword(s):  
Single Crystal ◽  
Electrochemical Behavior ◽  
Indium Selenide ◽  
P Type

The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices

2015 ◽  
Vol 3 (34) ◽  
pp. 8804-8809 ◽  
Author(s):  
Afzaal Qamar ◽  
Hoang-Phuong Phan ◽  
Jisheng Han ◽  
Philip Tanner ◽  
Toan Dinh ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Orientation ◽  
Offset Voltage ◽  
Device Geometry ◽  
Stress Dependent ◽  
P Type ◽  
The Impact ◽  
First Time

This communication reports for the first time, the impact of device geometry on the stress-dependent offset voltage of single crystal p-type 3C–SiC four terminal devices.

scholarly journals Donor/Acceptor Photovoltaic Cells Fabricated on p-Doped Organic Single-Crystal Substrates

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2068 ◽  
Author(s):  
Yusuke Yabara ◽  
Seiichiro Izawa ◽  
Masahiro Hiramoto
Keyword(s):  
Single Crystal ◽  
Photovoltaic Cells ◽  
Photocurrent Density ◽  
Iron Chloride ◽  
Single Crystal Substrate ◽  
Organic Single Crystal ◽  
Crystal Substrate ◽  
Donor Acceptor ◽  
Doping Technique ◽  
P Type

In this study, the operation of donor/acceptor photovoltaic cells fabricated on homoepitaxially grown p-doped rubrene single-crystal substrates is demonstrated. The photocurrent density is dominated by the sheet conductivity (σ□) of the p-type single-crystal layer doped to 100 ppm with an iron chloride (Fe2Cl6) acceptor. A 65 μm thick p-type rubrene single-crystal substrate is expected to be required for a photocurrent density of 20 mA·cm−2. An entire bulk doping technique for rubrene single crystals is indispensable for the fabrication of practical organic single-crystal solar cells.

scholarly journals Boosting the thermoelectric performance of p-type heavily Cu-doped polycrystalline SnSe via inducing intensive crystal imperfections and defect phonon scattering

2018 ◽  
Vol 9 (37) ◽  
pp. 7376-7389 ◽  
Author(s):  
Xiaolei Shi ◽  
Kun Zheng ◽  
Min Hong ◽  
Weidi Liu ◽  
Raza Moshwan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Phonon Scattering ◽  
Thermoelectric Performance ◽  
Solvothermal Route ◽  
Crystal Imperfections ◽  
P Type ◽  
First Time

In this study, we, for the first time, report a high Cu solubility of 11.8% in single crystal SnSe microbelts synthesized via a facile solvothermal route.

Single Crystalline 4H-SiC MEMS Devices with N-P-N Epitaxial Structure

2014 ◽  
Vol 1693 ◽  
Author(s):  
Feng Zhao ◽  
Allen Lim ◽  
Zhibang Chen ◽  
Chih-Fang Huang
Keyword(s):  
Single Crystal ◽  
Electronic Devices ◽  
Device Fabrication ◽  
Flat Band ◽  
Harsh Environment ◽  
Mems Devices ◽  
Etching Technique ◽  
Epitaxial Structure ◽  
Single Crystal Sic ◽  
P Type

ABSTRACTIn this paper, single crystal 4H-SiC MEMS devices with n-p-n epitaxial structure was fabricated. A dopant-selective photoelectrochemical etching technique was applied to etch the sacrificial p-type SiC layer to release n-type SiC suspended structures on n-type SiC substrate. The selective etching was achieved by applying a bias which employs the different flat-band potentials of n-SiC and p-SiC in KOH solution. Such MEMS devices have the potential to fully exploit the superior properties of single crystal SiC for harsh environment operation, as well as mature epitaxial growth and device fabrication of 4H-SiC. The n-p-n structure, together with the previously reported p-n structure, extends the capability of monolithic integration between MEMS with electronic devices and circuits on SiC platform.

Synthesis and Electrochemical Behavior of Single-Crystal Magnetite Nanoparticles

2008 ◽  
Vol 112 (14) ◽  
pp. 5301-5306 ◽  
Author(s):  
F. J. Santos ◽  
L. C. Varanda ◽  
L. C. Ferracin ◽  
M. Jafelicci
Keyword(s):  
Single Crystal ◽  
Magnetite Nanoparticles ◽  
Electrochemical Behavior

Microheater Made of Heavily Boron Doped Single Crystal Silicon Beam

1992 ◽  
Vol 276 ◽  
Author(s):  
Mitsuteru Kimura ◽  
Kazuhiro Komatsuzaki
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Bridge Structure ◽  
Quick Response ◽  
Crystal Silicon ◽  
Etching Technique ◽  
Small Power ◽  
Boron Doped ◽  
Type Layer ◽  
P Type

ABSTRACTMicroheater made of heavily Boron doped single crystal Si beam covered with SiO2 film, 1000×300×3 μm, is fabricated on the n type Si substrate by the anisotropic etching technique. As this microheater has an air bridge structure of low resistivity semiconductor material with positive but small temperature coefficient of resistance, a broad heating area up to 800 °C is easily obtained and it has quick response with the thermal time constant t of about 4 ms and has small power consumption. Since this heating area is made of p type layer in the n type substrate,this area can be electrically isolated from the substrate because of the formation of p-n junction.

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