A Theory of the Electronic Structures and Spectra of Negative Ions

1967 ◽  
Vol 40 (11) ◽  
pp. 2468-2674 ◽  
Author(s):  
Hiroshi Tsubomura ◽  
Sigenobu Sunakawa
Keyword(s):  
Electronic Structures ◽  
Negative Ions

THE IONIZATION AND DISSOCIATION OF SOME HALOGEN MOLECULES BY ELECTRON IMPACT

1960 ◽  
Vol 38 (3) ◽  
pp. 407-420 ◽  
Author(s):  
D. C. Frost ◽  
C. A. McDowell
Keyword(s):  
Electron Impact ◽  
Excited States ◽  
Electronic Structures ◽  
Negative Ions ◽  
Molecular Ions ◽  
Negative Ion ◽  
Iodine Monochloride ◽  
Monoenergetic Electron ◽  
Iodine Monobromide ◽  
Ionization Processes

The ionization and dissociation of chlorine, bromine, iodine, iodine monochloride, and iodine monobromide by electron impact have been studied in a mass spectrometer which uses a monoenergetic electron source. Many ionization potentials have been observed for these molecules which, of course, refer to the formation of the parent molecular ions in different excited states. These experimental results are discussed in terms of simple molecular orbital theories of the electronic structures of the different halogen molecules.Electron-induced dissociative ionization processes for the different substances have also been studied. Where possible, appearance potentials of both the positive and negative ions have been determined. These results have been used to construct potential energy diagrams illustrating the origin of some of the negative ion and dissociation processes observed.

The Nature of Oxide Surfaces: Topographic and Electronic Structure

1993 ◽  
Vol 51 ◽  
pp. 966-967
Author(s):  
Dawn A. Bonnell ◽  
Yong Liang
Keyword(s):  
Transition Metal Oxides ◽  
Electronic Structures ◽  
Recent Progress ◽  
Spatial Localization ◽  
Level Of Detail ◽  
Scanning Tunneling ◽  
Oxide Surfaces ◽  
Tunneling Microscopy ◽  
Considerable Effort ◽  
Complete Understanding

Recent progress in the application of scanning tunneling microscopy (STM) and tunneling spectroscopy (STS) to oxide surfaces has allowed issues of image formation mechanism and spatial resolution limitations to be addressed. As the STM analyses of oxide surfaces continues, it is becoming clear that the geometric and electronic structures of these surfaces are intrinsically complex. Since STM requires conductivity, the oxides in question are transition metal oxides that accommodate aliovalent dopants or nonstoichiometry to produce mobile carriers. To date, considerable effort has been directed toward probing the structures and reactivities of ZnO polar and nonpolar surfaces, TiO2 (110) and (001) surfaces and the SrTiO3 (001) surface, with a view towards integrating these results with the vast amount of previous surface analysis (LEED and photoemission) to build a more complete understanding of these surfaces. However, the spatial localization of the STM/STS provides a level of detail that leads to conclusions somewhat different from those made earlier.

Numerical Simulation of Leakage Current on Conductive Insulator Surface

2019 ◽  
Vol 8 (4) ◽  
pp. 9487-9492
Keyword(s):  
Numerical Simulation ◽  
Electric Field ◽  
Leakage Current ◽  
Method Of Lines ◽  
Electron Attachment ◽  
Negative Ions ◽  
Conduction Current ◽  
Insulator Surface ◽  
Finite Difference Approximations ◽  
Positive Ions

The outdoor insulator is commonly exposed to environmental pollution. The presence of water like raindrops and dew on the contaminant surface can lead to surface degradation due to leakage current. However, the physical process of this phenomenon is not well understood. Hence, in this study we develop a mathematical model of leakage current on the outdoor insulator surface using the Nernst Planck theory which accounts for the charge transport between the electrodes (negative and positive electrode) and charge generation mechanism. Meanwhile the electric field obeys Poisson’s equation. Method of Lines technique is used to solve the model numerically in which it converts the PDE into a system of ODEs by Finite Difference Approximations. The numerical simulation compares reasonably well with the experimental conduction current. The findings from the simulation shows that the conduction current is affected by the electric field distribution and charge concentration. The rise of the conduction current is due to the distribution of positive ion while the dominancy of electron attachment with neutral molecule and recombination with positive ions has caused a significant reduction of electron and increment of negative ions.

Advanced Electronic Structures

1992 ◽  
Author(s):  
Mark van Schilfgaarde
Keyword(s):  
Electronic Structures
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