scholarly journals The Oxygen Effect in the Hydrogen Bromide Catalysis of the Addition Reaction of Bromine to Cinnamic Acid in Carbon Tetrachloride Solution

1942 ◽  
Vol 17 (6) ◽  
pp. 274-281 ◽  
Author(s):  
Osamu Simamura
Keyword(s):  
Carbon Tetrachloride ◽  
Cinnamic Acid ◽  
Addition Reaction ◽  
Hydrogen Bromide ◽  
Oxygen Effect ◽  
Carbon Tetrachloride Solution

The Photo‐Chlorination of Methyl Chloroformate in Carbon Tetrachloride Solution

1949 ◽  
Vol 17 (6) ◽  
pp. 566-573 ◽  
Author(s):  
T. L. Batke ◽  
L. M. Dorfman ◽  
D. J. LeRoy
Keyword(s):  
Carbon Tetrachloride ◽  
Carbon Tetrachloride Solution

Synthesis of Silicon Carbide Films from Partially Oxidized Polyvinylsilane by Carbon Tetrachloride Solution Casting

2002 ◽  
Vol 17 (1) ◽  
pp. 214-223 ◽  
Author(s):  
Masaki Narisawa ◽  
Takeshi Hasegawa ◽  
Kiyohito Okamura ◽  
Masayoshi Itoh ◽  
Thomas Apple ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Tetrachloride ◽  
Radical Polymerization ◽  
Air Flow ◽  
Spectroscopic Studies ◽  
Flow Time ◽  
Silica Layer ◽  
Solution Casting ◽  
Amorphous Films ◽  
Carbon Tetrachloride Solution

Polyvinylsilane (PVS), derived from vinylsilane by radical polymerization, was partially oxidized in hot carbon tetrachloride solution by flowing air. If the air flow time is adjusted, soft gel films can be formed in a Teflon dish by casting the PVS solution. After the PVS films were peeled from the substrates, they were pyrolyzed at various temperatures. Spectroscopic studies of the pyrolyzed films up to 1273 K suggested that carbosilane (Si–CH2–Si) structures are formed in the films at 473–673 K. The compositions of the amorphous films obtained at 1673 K were approximately SiC1.38O0.21 and SiC1.41O0.51, depending on the crosslinking conditions. The oxygen incorporated in the films was removed in the form of CO and SiO during further heating at 1673–1873 K. The compositions of the films were changed to approximately SiC1.25 and SiC1.26, respectively, at 2073 K. The films obtained at 1273 K did not show degradation during the oxidation at 1273–1673 K while a protective silica layer was formed on their surfaces.

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