Comparison of Capacitance Spectroscopy for PV Semiconductors

2018 ◽  
pp. 221-239
Author(s):  
Adam Halverson
Keyword(s):  
Capacitance Spectroscopy

Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures

2020 ◽  
Vol 54 (10) ◽  
pp. 1260-1266
Author(s):  
M. M. Sobolev ◽  
F. Y. Soldatenkov
Keyword(s):  
Capacitance Spectroscopy

Capacitance Spectroscopy of Light Induced Trap States in Organic Solar Cells

2016 ◽  
Vol 120 (39) ◽  
pp. 22169-22178 ◽  
Author(s):  
Robert A. Street ◽  
Yang Yang ◽  
Barry C. Thompson ◽  
Iain McCulloch
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Trap States ◽  
Capacitance Spectroscopy

Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments

2012 ◽  
Vol 358 (17) ◽  
pp. 2007-2010 ◽  
Author(s):  
O.A. Maslova ◽  
M.E. Gueunier-Farret ◽  
J. Alvarez ◽  
A.S. Gudovskikh ◽  
E.I. Terukov ◽  
...  
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Schottky Diodes ◽  
Modeling And Experiments ◽  
Capacitance Spectroscopy ◽  
Charge Capacitance

Capacitance spectroscopy of a system of gapless Dirac fermions in a HgTe quantum well

JETP Letters ◽  
2016 ◽  
Vol 104 (12) ◽  
pp. 859-863 ◽  
Author(s):  
D. A. Kozlov ◽  
M. L. Savchenko ◽  
J. Ziegler ◽  
Z. D. Kvon ◽  
N. N. Mikhailov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dirac Fermions ◽  
Capacitance Spectroscopy

Electrical Properties of Dislocations and Boundaries in Semiconductors

1982 ◽  
Vol 14 ◽  
Author(s):  
Hans J. Queisser
Keyword(s):  
Electrical Properties ◽  
Imaging Techniques ◽  
Experimental Methods ◽  
Actual Situation ◽  
Dangling Bond ◽  
Semiconductor Crystals ◽  
Capacitance Spectroscopy ◽  
Electron Microscopes ◽  
Regular Arrays ◽  
Electronic Behavior

ABSTRACTSimple models have been suggested to predict electronic properties of lattice defects in semiconductor crystals: dislocations ought to act via the acceptor character of dangling bonds, and small-angle grain boundaries ought to consist of regular arrays of dislocations. The actual situation in most semiconductors is, however, much more complicated. The observed electrical effects of dislocations do not confirm the dangling-bond concept, they are affected by dissociation and reconstruction. There appear to be differences between straight and kinked dislocations. Dislocations owe much of their electronic behavior to clouds and precipitates of impurities; oxygen in silicon plays a significant role. This review summarizes the present status of experimental methods and results, including luminescence and capacitance spectroscopy as well as mapping and imaging techniques using electron-microscopes.

Capacitance spectroscopy of CdTe self-assembled quantum dots embedded in ZnTe matrix

2009 ◽  
Vol 404 (23-24) ◽  
pp. 5173-5176 ◽  
Author(s):  
E. Placzek-Popko ◽  
E. Zielony ◽  
J. Trzmiel ◽  
J. Szatkowski ◽  
Z. Gumienny ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Capacitance Spectroscopy ◽  
Self Assembled
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