Recombination Current in the Semiconductor Diode

2017 ◽  
pp. 85-100
Author(s):  
Juan Bisquert
Keyword(s):  
Semiconductor Diode ◽  
Recombination Current

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

The possibility of using tantalum oxide microparticles in phosphate glass for radiation therapy of malignant neoplasms

2020 ◽  
pp. 85-87
Author(s):  
O. S. Plotnikova ◽  
V. I. Apanasevich ◽  
M. A. Medkov ◽  
A. A. Polezhaev ◽  
V. I. Nevozhai ◽  
...  
Keyword(s):  
Phosphate Glass ◽  
Linear Accelerator ◽  
Malignant Tumors ◽  
Video Recording ◽  
Tantalum Oxide ◽  
Vertical Plane ◽  
Secondary Radiation ◽  
Semiconductor Diode ◽  
Malignant Neoplasms ◽  
Diode Detector

Objective: The creation of the medicine for a local radiomodification of tumors.Methods: The level of the secondary radiation on the surface of the phosphate glass powder with the inclusion of tantalum oxide processed by 6 MeV deceleration emission was studied. Medical linear accelerator TrueBeam (Varian, USA), and Semiconductor diode detector PDI 2.0 (Sun Nuclear Corp., USA) having the system of moving in vertical plane and the system of position video recording were used.Results: The presence of the phosphate glass (containing 20% Та2О5) on the surface gave a 63.7% increase to the secondary radiation. It’s around two thirds of the overall level.Conclusion: An opportunity to create a medicine on the basis of phosphate glass, containing tantalum oxide, for local radiomodification of malignant tumors. 

Analytical Estimation of Recombination Current of Sharp Asymmetric p-n Junction

2019 ◽  
Vol 11 (5) ◽  
pp. 05005-1-05005-8
Author(s):  
A. B. Galat ◽  
◽  
A. L. Donchenko ◽  
Keyword(s):  
Analytical Estimation ◽  
Recombination Current

Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator- Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1200-L1202 ◽  
Author(s):  
Kunio Ichino ◽  
Toshikazu Onishi ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Semiconductor Diode ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Evaluation of the Significance of Constant Laser Therapy, 532 nm, in Various Exposure Times on the Healing Process of Wounds Infected by Acinetobacter baumannii

2021 ◽  
pp. 153473462098403
Author(s):  
Zahra Al-Timimi
Keyword(s):  
Acinetobacter Baumannii ◽  
Laser Therapy ◽  
Continuous Wave ◽  
Healing Process ◽  
Positive Influence ◽  
Semiconductor Diode ◽  
Thickness Skin ◽  
Scale Range ◽  
The Times ◽  
532 Nm

Many considerable investigations focused on the stimulation of therapeutic manners of infected injuries in mice. The exaggerated pathogens that induced wounds were gram-positive like staphylococcal and gram-negative, for example, Pseudomonas aeuroginosa and Acinetobacter baumannii. Acinetobacter can generate a scale range of an infection that may be received in a hospital or any wellness concern facility. In order to know the significance of laser 532 nm with a constant irradiance at various exposure times on the healing process of wounds infected by Acinetobacter baumannii, this study was performed on the BALB/C mice. An elliptical full-thickness skin injury was made on the backside of 45 adult female (BALB/C) mice. Injuries were affected via Acinetobacter baumannii and were randomly assigned into 3 groups. Semiconductor diode continuous wave laser, λ = 532 nm, with output power 40 mW was used. The power density was 5.71 mW/cm2, while the fluencies were 1.7 J/cm2 and 5.14 J/cm2. Fifteen mice were classified according to the times of irradiation. The first group was infected and presented as control, without irradiation. The second group was infected and irradiated for 5 minutes. The third group, likewise, was infected but irradiated for 15 minutes. All groups were subdivided according to the following period, 3, 5, and 10 days, after irradiation and the animals were killed after the treatment. Wound healing was made by measuring the rate of wound closure and histopathological evaluation. The study determined that 532 nm laser therapy had an obvious and positive influence on the healing of infected wounds with fluence (5.14 J/cm2).

scholarly journals High Precision Human Skin Temperature Fluctuations Measuring Instrument

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4101
Author(s):  
Nikolai B. Suvorov ◽  
Alexander V. Belov ◽  
Konstantin G. Kuliabin ◽  
Aleksei A. Anisimov ◽  
Timofei V. Sergeev ◽  
...  
Keyword(s):  
Skin Temperature ◽  
Human Skin ◽  
High Precision ◽  
Temperature Fluctuations ◽  
Preliminary Test ◽  
Semiconductor Diode ◽  
Measuring Instrument ◽  
Voltage Range ◽  
Temperature Oscillations ◽  
Depth Study

This paper describes the experimental results of testing a prototype of a high precision human skin rapid temperature fluctuations measuring instrument. Based on the author’s work, an original circuit solution on a miniature semiconductor diode sensor has been designed. The proposed circuitry provides operation in the full voltage range with automatic setting and holding the operating point, as well as the necessary slope of the conversion coefficient (up to 2300 mV/°C), which makes it possible to register fast temperature oscillations from the surface of the human body and other biological objects. Simulation results in the Microcap 12 software and laboratory tests have confirmed all declared design specifications: temperature resolution of 0.01 °C, transducer thermal time constant of 0.05 s. An original thermostat and an experimental setup for the simultaneous registration of the electrocardiogram, pulse wave signals from the Biopac polygraph MP36 and a signal of temperature oscillations from the prototype thermometer have been designed for further investigations. The preliminary test results indicates that using the designed measuring instrument gives a possibility to provide an in-depth study of the relationship between micro- and macro-blood circulations manifested in skin temperature fluctuations.

A New Method For The Electronic And Chemical Passivation Of GaAs Surfaces Using CS2

1995 ◽  
Vol 406 ◽  
Author(s):  
Ju-Hyung Lee ◽  
Yanzhen Xu ◽  
Veronica A. Burrows ◽  
Paul F. McMillan
Keyword(s):  
Surface Passivation ◽  
Passivation Layer ◽  
Semiconductor Diode ◽  
Photoluminescence Intensity ◽  
Atmospheric Conditions ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Capacitance Voltage ◽  
Chemical Passivation ◽  
Homogeneous Film

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.

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