Conventional and Laser Annealing to Improve Electrical and Thermal Contacts between Few-Layer or Multilayer Graphene and Metals

2016 ◽  
pp. 25-40
Author(s):  
Alfredo Rodrigues Vaz ◽  
Andrei Alaferdov ◽  
Victor Ermakov ◽  
Stanislav Moshkalev
2014 ◽  
Vol 9 (3) ◽  
pp. 374-380 ◽  
Author(s):  
J. V. Silveira ◽  
R. Savu ◽  
M. A. Canesqui ◽  
O. L. Alves ◽  
J. Mendes Filho ◽  
...  

2014 ◽  
Vol 121 ◽  
pp. 55-58 ◽  
Author(s):  
S.A. Moshkalev ◽  
V.A. Ermakov ◽  
A.R. Vaz ◽  
A.V. Alaferdov ◽  
R. Savu ◽  
...  

2013 ◽  
Vol 24 (15) ◽  
pp. 155301 ◽  
Author(s):  
Victor A Ermakov ◽  
Andrei V Alaferdov ◽  
Alfredo R Vaz ◽  
Alexander V Baranov ◽  
Stanislav A Moshkalev

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1325-C8-1326
Author(s):  
P. Sánchez ◽  
M. C. Sánchez ◽  
E. López ◽  
M. García ◽  
C. Aroca

2016 ◽  
Vol 136 (12) ◽  
pp. 493-498 ◽  
Author(s):  
Junko Kazusa ◽  
Kazuhiro Koga ◽  
Norio Umeyama ◽  
Fumito Imura ◽  
Daiji Noda ◽  
...  

1980 ◽  
Vol 3 ◽  
Author(s):  
M. Van Rossum ◽  
I. Dezsi ◽  
G. Langouche ◽  
J. De Bruyn ◽  
R. Coussement

ABSTRACTThe laser annealing behaviour of Te-implanted GaAs, GaSb, GaP and InP has been studied by Mössbauer Spectroscopy. The spectra of the as-implanted samples are characterized by a quadrupole split multiplet, showing that the Te ions come to rest at non-substitutional lattice sites. The laser annealing is shown to shift the implanted impurities towards substitutional positions. The efficiency of the laser annealing procedure is very similar for all lattices under study.


2002 ◽  
Vol 715 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Min-Koo Han

AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.


2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  

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