Metal Contacts to Graphene

2016 ◽  
pp. 69-94
Keyword(s):  
Metal Contacts

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

scholarly journals Electroplated Copper Metal Contacts on Perovskite Solar Cells

Solar RRL ◽  
2021 ◽  
Author(s):  
Thibaud Hatt ◽  
Özde Ş. Kabakli ◽  
Patricia S. C. Schulze ◽  
Armin Richter ◽  
Stefan W. Glunz ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Metal Contacts ◽  
Copper Metal ◽  
Electroplated Copper

Impact of firing temperature on fire-through metal contacts to P-doped (n) and B-doped (p) poly-Si

2021 ◽  
Vol 230 ◽  
pp. 111217
Author(s):  
Pradeep Padhamnath ◽  
Ankit Khanna ◽  
Naomi Nandakumar ◽  
Armin G. Aberle ◽  
Shubham Duttagupta
Keyword(s):  
Firing Temperature ◽  
Metal Contacts

scholarly journals A flexible platform for controlled optical and electrical effects in tailored plasmonic break junctions

Nanophotonics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 1391-1400
Author(s):  
Florian Laible ◽  
Kai Braun ◽  
Otto Hauler ◽  
Martin Eberle ◽  
Dieter P. Kern ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Tunneling Current ◽  
Plasmonic Nanostructures ◽  
Break Junction ◽  
Metal Contacts ◽  
Break Junctions ◽  
Constant Bias ◽  
Confocal Scanning ◽  
Atomic Point Contacts

AbstractMechanically controllable break junctions are one suitable approach to generate atomic point contacts and ultrasmall and controllable gaps between two metal contacts. For constant bias voltages, the tunneling current can be used as a ruler to evaluate the distance between the contacts in the sub-1-nm regime and with sub-Å precision. This ruler can be used to measure the distance between two plasmonic nanostructures located at the designated breaking point of the break junction. In this work, an experimental setup together with suitable nanofabricated break junctions is developed that enables us to perform simultaneous gap-dependent optical and electrical characterization of coupled plasmonic particles, more specifically bowtie antennas in the highly interesting gap range from few nanometers down to zero gap width. The plasmonic break junction experiment is performed in the focus of a confocal microscope. Confocal scanning images and current measurements are simultaneously recorded and exhibit an increased current when the laser is focused in the proximity of the junction. This setup offers a flexible platform for further correlated optoelectronic investigations of coupled antennas or junctions bridged by nanomaterials.

scholarly journals Ultra-wideband self-powered photodetector based on suspended reduced graphene oxide with asymmetric metal contacts

RSC Advances ◽  
2021 ◽  
Vol 11 (32) ◽  
pp. 19482-19491
Author(s):  
Qianqian Hu ◽  
Yang Cao ◽  
Yu Liu ◽  
Yingxin Wang ◽  
Chenfeng Wang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Ultra Wideband ◽  
Metal Contacts ◽  
Reduced Graphene ◽  
Self Powered

An ultra-wideband self-powered photodetector based on suspended reduced graphene oxide with asymmetric metal contacts is reported.

Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials

2021 ◽  
Vol 103 (12) ◽  
Author(s):  
Lili Kang ◽  
Peng Jiang ◽  
Hua Hao ◽  
Yanhong Zhou ◽  
Xiaohong Zheng ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Ferroelectric Materials ◽  
Two Dimensional ◽  
Metal Contacts

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning

Diode Characteristics of Nanocomposited MEH-PPV: I-MWNTs with Different Types of Metal Contact Organic Solar Cells

2012 ◽  
Vol 576 ◽  
pp. 773-776 ◽  
Author(s):  
Puteri Sarah Mohamad Saad ◽  
F.S.S. Zahid ◽  
M. Rusop
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Organic Solar Cells ◽  
Metal Contact ◽  
Metal Contacts ◽  
Different Types

This paper investigates the performance of organic solar cells by using different types of metal contact. The metal contacts that have been chosen are Ag, Au and Pt. The different work function of the metals will influence the efficiency of the organic solar cells. From the results it can be seen that the absorbance value is quite high around 0.5 which absorb more photon when it is illuminated. The efficiency of the device using Pt shows the highest efficiency which is 10.62x10-3% followed by Au with 8.01x10-4% and Ag 1.25x10-4%.

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