Graphene as a Spin-Polarized Tunnel Barrier

2016 ◽  
pp. 21-36
Keyword(s):  
Tunnel Barrier ◽  
Spin Polarized

scholarly journals Organic spintronics

2011 ◽  
Vol 369 (1948) ◽  
pp. 3054-3068 ◽  
Author(s):  
I. Bergenti ◽  
V. Dediu ◽  
M. Prezioso ◽  
A. Riminucci
Keyword(s):  
Organic Semiconductors ◽  
Spin Transport ◽  
Tunnel Barrier ◽  
Organic Spintronics ◽  
Open Questions ◽  
Spin Polarized ◽  
Basic Concepts ◽  
Functional Operation ◽  
Spin Devices

Organic semiconductors are emerging materials in the field of spintronics. Successful achievements include their use as a tunnel barrier in magnetoresistive tunnelling devices and as a medium for spin-polarized current in transport devices. In this paper, we give an overview of the basic concepts of spin transport in organic semiconductors and present the results obtained in the field, highlighting the open questions that have to be addressed in order to improve devices performance and reproducibility. The most challenging perspectives will be discussed and a possible evolution of organic spin devices featuring multi-functional operation is presented.

Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 389-394 ◽  
Author(s):  
Stuart Parkin
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Memory Storage ◽  
Tunnel Barrier ◽  
Tunnel Magnetoresistance ◽  
Ferromagnetic Electrodes ◽  
Diffusive Scattering ◽  
Spin Polarized ◽  
Tunnel Barriers

AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its discovery nearly two decades ago, in the past five years there has been a remarkably rapid development in both the basic understanding of spin-dependent tunneling and the magnitude of useful tunnel magnetoresistance values.In particular, it is now evident that the magnitude of the spin polarization of tunneling currents in magnetic tunnel junctions not only is related to the spin-dependent electronic structure of the ferromagnetic electrodes but also is considerably influenced by the properties of the tunnel barrier and its interfaces with the magnetic electrodes.Whereas the maximum tunnel magnetoresistance of devices using amorphous alumina tunnel barriers and 3d transition-metal alloy ferromagnetic electrodes is about 70% at room temperature, using crystalline MgO tunnel barriers in otherwise the same structures gives tunnel magnetoresistance values of more than 350% at room temperature.

scholarly journals Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes

2017 ◽  
Vol 114 (8) ◽  
pp. 1783-1788 ◽  
Author(s):  
Nozomi Nishizawa ◽  
Kazuhiro Nishibayashi ◽  
Hiro Munekata
Keyword(s):  
Circular Polarization ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Polarized Light ◽  
Tunnel Barrier ◽  
Light Emitting ◽  
Left Handed ◽  
Spin Polarized ◽  
Side Walls ◽  
Device Operation

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOxspin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP whenJ> 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

Graphene as a Spin-Polarized Tunnel Barrier

2016 ◽  
pp. 3-18
Author(s):  
Olaf Erve ◽  
Enrique Cobas ◽  
Adam Friedman ◽  
Connie Li ◽  
Aubrey Hanbicki ◽  
...  
Keyword(s):  
Tunnel Barrier ◽  
Spin Polarized

Tunnel Barrier Engineering of Spin-Polarized Mild Band Gap Vertical Ternary Heterostructures

2021 ◽  
Author(s):  
Iuliia Melchakova ◽  
Pavel V. Avramov
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Carbon Nitride ◽  
Single Layer ◽  
Graphitic Carbon ◽  
Graphitic Carbon Nitride ◽  
Tunnel Barrier ◽  
Structure And Properties ◽  
Spin Polarized ◽  
Atomic And Electronic Structure

The atomic and electronic structure and properties of advanced 2D ternary vertical spin-polarized semiconducting heterostructures based on mild band gap graphitic carbon nitride g-C3N4 and ferromagnetic single-layer CrI3 fragments, namely...

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