Porous Si and Si Nanostructures in Photovoltaics

2016 ◽  
pp. 211-238
Author(s):  
Valeriy Skryshevsky ◽  
Tetyana Nychyporuk
Keyword(s):  
Porous Si ◽  
Si Nanostructures

Characterization of Visible and Infrared (1.54 μm) Luminescence from Er-doped Porous Si

1996 ◽  
Vol 422 ◽  
Author(s):  
R. White ◽  
X. Wu ◽  
U. Hömmerich ◽  
F. Namavar ◽  
A. M. Cremins-Costa
Keyword(s):  
Temperature Dependence ◽  
Photoluminescence Excitation ◽  
Porous Si ◽  
Pl Intensity ◽  
Si Nanostructures ◽  
Er Doped

AbstractResults of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er: PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 6507deg;C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er: PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er3+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15–375K) of Er3+ PL intensity and lifetime are also reported.

Silicon Nanostructures in Si-Based Light-Emithing Devices

1993 ◽  
Vol 298 ◽  
Author(s):  
Fereydoon Namavar ◽  
R.F. Pinizzotto ◽  
H. Yang ◽  
N. Kalkhoran ◽  
P. Maruska
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Silicon Nanostructures ◽  
Porous Si ◽  
Cross Sectional ◽  
Quantum Size ◽  
Visible Wavelengths ◽  
Si Nanostructures

AbstractHigh resolution cross-sectional electron microscopy and electron diffraction of an np heterojunction porous Si device, capable of emitting light at visible wavelengths, clearly indicates the presence of Si nanostructures within the quantum size regime. These results indicate that the quantum confinement effect is at least partially responsible for photoluminescence at visible wavelengths.

Light Emission from Porous Silicon Subjected to Rapid Thermal Oxidation

1992 ◽  
Vol 283 ◽  
Author(s):  
A. G. Cullis ◽  
L. T. Canham ◽  
G. M. Williams ◽  
P. W. Smith ◽  
O. D. Dosser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Porous Silicon ◽  
Light Emission ◽  
Porous Si ◽  
Light Emitting ◽  
X Ray ◽  
Amorphous Phases ◽  
Transmission Electron ◽  
Si Nanostructures

ABSTRACTLuminescent oxidised porous Si is produced by rapid thermal annealing of the anodised material in a dry oxygen ambient. Its light-emitting properties are studied by both photoluminescence and cathodoluminescence methods. The structure of the oxidised material is examined by transmission electron microscopy, while its oxygen content is determined by X-ray microanalysis. These investigations show that crystalline Si nanostructures remain in the oxidised porous material and account for its luminescence properties. The work demonstrates that the speculated importance of either Si-based amorphous phases or the interesting material, siloxene, in this regard is unrealistic.

Optical properties of porous silicon

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1184-1193 ◽  
Author(s):  
D. J. Lockwood ◽  
G. C. Aers ◽  
L. B. Allard ◽  
B. Bryskiewicz ◽  
S. Charbonneau ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Confinement ◽  
Chemical Dissolution ◽  
Optical Absorption Spectra ◽  
Porous Si ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Nanostructures ◽  
Si Films

The optical and structural properties of porous Si films produced by electrochemical and chemical dissolution of Si have been studied by a variety of techniques. Raman scattering and transmission electron microscopy have shown the samples to contain crystalline Si wires and (or) spherites 3–8 nm in diameter and (or) amorphous Si. The optical absorption spectra and the wavelength, temperature, and lifetime dependence of the photoluminescence obtained from most of the samples are entirely consistent with the quantum confinement of excitons in Si nanostructures. Quite different photoluminescence was obtained from other samples composed only of amorphous Si, and this is attributed to the presence of silicon oxyhydride species.

Effect of porosity on the enhancement of relative magnetoconductance in porous Si nanostructures: a comparative study with Si nanowires

2017 ◽  
Vol 123 (7) ◽  
Author(s):  
B. Chouaibi ◽  
M. Radaoui ◽  
N. Nafie ◽  
A. Ben Fredj ◽  
S. Romdhane ◽  
...  
Keyword(s):  
Comparative Study ◽  
Porous Si ◽  
Si Nanowires ◽  
Si Nanostructures
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