Investigation of Defects and Impurities in Silicon by Infrared and Photoluminescence Spectroscopies

2014 ◽  
pp. 338-367
Keyword(s):  
Defects And Impurities

Defects and impurities in SRTIO3films: Evidence from ESR

2000 ◽  
Vol 239 (1) ◽  
pp. 349-356 ◽  
Author(s):  
I. P. Bykov ◽  
M. D. Glinchuk ◽  
V. V. Laguta ◽  
A. M. Slipenyuk ◽  
S. M. Korniyenko ◽  
...  
Keyword(s):  
Defects And Impurities

High temperature dielectric loss of h-BN at X band and its dependence on the electron structure, defects and impurities

2010 ◽  
Vol 12 (9) ◽  
pp. 1599-1602 ◽  
Author(s):  
Ting Zhang ◽  
Mengqiang Wu ◽  
Shuren Zhang ◽  
Jinming Wang ◽  
Dahai Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Loss ◽  
Electron Structure ◽  
Structure Defects ◽  
X Band ◽  
Defects And Impurities

scholarly journals Local electronic structure of intrinsic defects and impurities at the Fe(001) surface

2000 ◽  
Vol 445 (1) ◽  
pp. 123-129 ◽  
Author(s):  
C.M. Fang ◽  
R.A. de Groot ◽  
M.M.J. Bischoff ◽  
H. van Kempen
Keyword(s):  
Electronic Structure ◽  
Intrinsic Defects ◽  
Local Electronic Structure ◽  
Defects And Impurities

Time-dependent evolution of crystal lattice, defects and impurities in CdIn2S4and GaP

2009 ◽  
Vol 6 (5) ◽  
pp. 1112-1115 ◽  
Author(s):  
Sergei L. Pyshkin ◽  
John Ballato ◽  
Michael Bass ◽  
George Chumanov ◽  
Giorgio Turri
Keyword(s):  
Crystal Lattice ◽  
Lattice Defects ◽  
Time Dependent ◽  
Defects And Impurities ◽  
Crystal Lattice Defects

Electron Paramagnetic Resonance Studies of Intrinsic Bonding Defects and Impurities in SiO2 Thin Solid Films

1985 ◽  
Vol 61 ◽  
Author(s):  
Robert N. Schwartz ◽  
Marion D. Clark ◽  
Walee Chamulitrat ◽  
Larry Kevan
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Pressure Chemical ◽  
Defects And Impurities ◽  
Electron Paramagnetic

ABSTRACTElectron paramagnetic resonance (EPR) spectroscopy has been used to identify paramagnetic intrinsic bonding defects and impurities in as-deposited thin solid SiO2 films. Thin films grown by E-beam vacuum deposition, RF sputtering, thermal oxidation of polysilicon, plasma enhanced chemical vapor deposition (PECVD), and low pressure chemical vapor deposition (LPCVD) techniques have been examined. Some of the growth techniques yield films that have paramagnetic centers similar to those found in bulk radiation-damaged vitreous SiO2. A new temperature dependent EPR center was observed in PECVD SiO2 films and has been assigned to trapped NO2. Slow-motional EPR lineshape theory was used to analyze the temperature dependent spectra.

The Electronic States and Dynamical Properties of Hydrogen Bound to Carbon in Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
Yoichi Kamiura ◽  
Fumio Hashimoto ◽  
Minoru Yoneta
Keyword(s):  
Experimental Data ◽  
Chemical Etching ◽  
Hydrogen Diffusion ◽  
Hydrogen Plasma ◽  
Electronic States ◽  
Electron Trap ◽  
Defects And Impurities ◽  
Dynamical Properties ◽  
C Complex ◽  
Hydrogen Bound

ABSTRACTThis paper demonstrates a unique action of hydrogen on defects and impurities in semiconductors. Hydrogen injected into n-type Si by chemical etching or hydrogen plasma not only pas-sivatcs phosphorus but also electrically activates carbon by forming a H-C complex acting as an electron trap E3 (0.15). A model of the structure and electronic state of the H-C complex is proposed on the basis of available experimental data on the properties of the complex. The diffusion coefficient of isolated hydrogen below 300K is evaluated from its diffusion process to phosphorus after the photoinduccd dissociation of the H-C complex. Some differences in hydrogen diffusion between chemically etched and plasma hydrogenated crystals arc discussed.

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