Research on discrete bipolar switching effect in memristor device

2014 ◽  
pp. 289-292
Keyword(s):  
Switching Effect ◽  
Bipolar Switching ◽  
Memristor Device

scholarly journals Resistive Switching in Electrodeposited Prussian Blue Layers

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5618
Author(s):  
Lindiomar Borges Avila ◽  
Christian K. Müller ◽  
Dirk Hildebrand ◽  
Fabrício L. Faita ◽  
Bruna F. Baggio ◽  
...  
Keyword(s):  
Prussian Blue ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Switching Effect ◽  
Ohmic Conduction ◽  
Electrical Measurements ◽  
Bipolar Switching ◽  
Composition And Structure ◽  
Resistance State ◽  
Resistive Switching Effect

Prussian blue (PB) layers were electrodeposited for the fabrication of Au/PB/Ag stacks to study the resistive switching effect. The PB layers were characterized by different techniques to prove the homogeneity, composition, and structure. Electrical measurements confirmed the bipolar switching behavior with at least 3 orders of magnitude in current and the effect persisting for the 200 cycles tested. The low resistance state follows the ohmic conduction with an activation energy of 0.2 eV.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

Switching effect on the stability of the prey-predator system with three trophic levels

1986 ◽  
Vol 122 (3) ◽  
pp. 251-262 ◽  
Author(s):  
Hiroyuki Matsuda ◽  
Kohkichi Kawasaki ◽  
Nanako Shigesada ◽  
Ei Teramoto ◽  
Luigi M. Ricciardi
Keyword(s):  
Trophic Levels ◽  
Switching Effect ◽  
The Stability ◽  
Predator System

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850038 ◽  
Author(s):  
Shuangsuo Mao ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Bing Li ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Multilayer Films ◽  
Text Structure ◽  
Switching Effect ◽  
Access Memory ◽  
Multi Stage ◽  
Switching Phenomenon ◽  
Resistance Random Access Memory ◽  
Resistive Switching Effect

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

scholarly journals Fast-switching effect using viscous chiral-nematic materials

2016 ◽  
pp. 1-6 ◽  
Author(s):  
Valeri Lapanik ◽  
Sergei Timofeev ◽  
Genadz Sasnouski ◽  
Vladimir Bezborodov ◽  
Wolfgang Haase
Keyword(s):  
Switching Effect ◽  
Fast Switching ◽  
Chiral Nematic

Spin-filtering transport and switching effect of MnCu single-molecule magnet

2010 ◽  
Vol 96 (19) ◽  
pp. 192112 ◽  
Author(s):  
H. Hao ◽  
X. H. Zheng ◽  
Z. X. Dai ◽  
Z. Zeng
Keyword(s):  
Single Molecule ◽  
Switching Effect ◽  
Single Molecule Magnet ◽  
Spin Filtering
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