Construction and response of the deep trench systems to protect a road by-pass at the Ancona Landslide

2004 ◽  
pp. 1659-1664 ◽  
Author(s):  
V Fruzzetti ◽  
E Sakellariadi ◽  
G Scarpelli
Keyword(s):  
Deep Trench ◽  
Ancona Landslide

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Summer phytoplankton of the northern Barents Sea (75–80º N)

2019 ◽  
pp. 8-19
Author(s):  
Larisa A. Pautova ◽  
Vladimir A. Silkin ◽  
Marina D. Kravchishina ◽  
Valeriy G. Yakubenko ◽  
Anna L. Chultsova
Keyword(s):  
Barents Sea ◽  
Weighted Average ◽  
Arctic Basin ◽  
High Arctic ◽  
Alexandrium Tamarense ◽  
Warm Water ◽  
The Arctic ◽  
Absolute Maximum ◽  
Deep Trench ◽  
Maximum Biomass

The structure of the summer planktonic communities of the Northern part of the Barents sea in the first half of August 2017 were studied. In the sea-ice melting area, the average phytoplankton biomass producing upper 50-meter layer of water reached values levels of eutrophic waters (up to 2.1 g/m3). Phytoplankton was presented by diatoms of the genera Thalassiosira and Eucampia. Maximum biomass recorded at depths of 22–52 m, the absolute maximum biomass community (5,0 g/m3) marked on the horizon of 45 m (station 5558), located at the outlet of the deep trench Franz Victoria near the West coast of the archipelago Franz Josef Land. In ice-free waters, phytoplankton abundance was low, and the weighted average biomass (8.0 mg/m3 – 123.1 mg/m3) corresponded to oligotrophic waters and lower mesotrophic waters. In the upper layers of the water population abundance was dominated by small flagellates and picoplankton from, biomass – Arctic dinoflagellates (Gymnodinium spp.) and cold Atlantic complexes (Gyrodinium lachryma, Alexandrium tamarense, Dinophysis norvegica). The proportion of Atlantic species in phytoplankton reached 75%. The representatives of warm-water Atlantic complex (Emiliania huxleyi, Rhizosolenia hebetata f. semispina, Ceratium horridum) were recorded up to 80º N, as indicators of the penetration of warm Atlantic waters into the Arctic basin. The presence of oceanic Atlantic species as warm-water and cold systems in the high Arctic indicates the strengthening of processes of “atlantificacion” in the region.

Locating Gate Oxide Failures Using KOH

2016 ◽  
Author(s):  
Lori L. Sarnecki
Keyword(s):  
Potassium Hydroxide ◽  
Gate Oxide ◽  
New Technique ◽  
Deep Trench ◽  
New Methods ◽  
Wet Etch

Abstract This paper presents two new methods using potassium hydroxide (KOH) as a wet etch technique to successfully stop on gate oxide and find the submicron gate oxide failures that correspond to failure response sites. Applications of this new technique to submicron gate oxide failures on both planar and deep trench MOSFET devices are reported in this paper.

20-μm deep trench isolation process characterization for linear bipolar ICs

2001 ◽  
Author(s):  
Terry Dyer ◽  
Ian J. Doohan ◽  
Martin Fallon ◽  
Dave McAlpine ◽  
Adam Aitkenhead ◽  
...  
Keyword(s):  
Deep Trench ◽  
Process Characterization ◽  
Trench Isolation

An extending broadband near-infrared absorption of Si-based deep-trench microstructures

2017 ◽  
Vol 392 ◽  
pp. 59-63 ◽  
Author(s):  
Haigui Yang ◽  
Xiaoyi Liu ◽  
Jinsong Gao ◽  
Xiaoyi Wang ◽  
Hai Liu ◽  
...  
Keyword(s):  
Infrared Absorption ◽  
Near Infrared ◽  
Deep Trench

Application of deep-trench LISA technology on optical switch fabrication

2002 ◽  
Author(s):  
Qingxin Zhang ◽  
Jing Li ◽  
Yu Bo Miao ◽  
Ai Q. Liu
Keyword(s):  
Optical Switch ◽  
Deep Trench
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