Metal Silicide Nanowires: Growth And Properties

2016 ◽  
pp. 139-204
Keyword(s):  
Metal Silicide ◽  
Nanowires Growth

Digital image processing methods applied to the study of annealing time on semiconductor-metal eutectic composites

1988 ◽  
Vol 46 ◽  
pp. 848-849
Author(s):  
J. Hefter
Keyword(s):  
Image Processing ◽  
Digital Image Processing ◽  
Digital Image ◽  
Electronic Device ◽  
Processing System ◽  
Average Diameter ◽  
Eutectic Solidification ◽  
Metal Silicide ◽  
The Matrix ◽  
Microscopic Studies

Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.

Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates

1983 ◽  
Vol 54 (4) ◽  
pp. 1849-1854 ◽  
Author(s):  
J. E. E. Baglin ◽  
F. M. d’Heurle ◽  
C. S. Petersson
Keyword(s):  
Silicon Oxide ◽  
Silicon Substrates ◽  
Metal Silicide ◽  
Interface Effects

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application

2009 ◽  
Vol 154 ◽  
pp. 95-100 ◽  
Author(s):  
Seiichi Miyazaki ◽  
Mitsuhisa Ikeda ◽  
Katsunori Makihara ◽  
K. Shimanoe ◽  
R. Matsumoto
Keyword(s):  
Surface Potential ◽  
Room Temperature ◽  
Areal Density ◽  
Film Deposition ◽  
Floating Gate ◽  
Metal Silicide ◽  
Kelvin Probe ◽  
Measuring Surface ◽  
Surface Potential Measurements ◽  
Mis Capacitors

We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature. Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique. Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.

A structure modeling of metal-silicide layers by using axial and planar channeling techniques

1978 ◽  
Vol 149 (1-3) ◽  
pp. 417-420 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Masao Nagatomo ◽  
Seijiro Furukawa
Keyword(s):  
Structure Modeling ◽  
Metal Silicide ◽  
Planar Channeling

Microstructure and wear resistance of Cuss-toughened Cr5Si3/CrSi metal silicide alloys

2005 ◽  
Vol 20 (5) ◽  
pp. 1122-1130 ◽  
Author(s):  
Y.X. Yin ◽  
H.M. Wang
Keyword(s):  
Solid Solution ◽  
Wear Resistance ◽  
Sliding Wear ◽  
Room Temperature ◽  
Wear Test ◽  
Melting Process ◽  
Dry Sliding Wear ◽  
Metal Silicide ◽  
X Ray Diffraction ◽  
X Ray

Wear-resistant Cu-based solid-solution-toughened Cr5Si3/CrSi metal silicide alloy with a microstructure consisting of predominantly the dual-phase primary dendrites with a Cr5Si3 core encapsulated by CrSi phase and a small amount of interdendritic Cu-based solid solution (Cuss) was designed and fabricated by the laser melting process using Cr–Si–Cu elemental powder blends as the precursor materials. The microstructure of the Cuss-toughened Cr5Si3/CrSi metal silicide alloy was characterized by optical microscopy, powder x-ray diffraction, and energy dispersive spectroscopy. The Cuss-toughened silicide alloys have excellent wear resistance and low coefficient of friction under room temperature dry sliding wear test conditions with hardened 0.45% C carbon steel as the sliding–mating counterpart.

Processing high-temperature refractory-metal silicide in-situ composites

JOM ◽  
1999 ◽  
Vol 51 (4) ◽  
pp. 32-36 ◽  
Author(s):  
B. P. Bewlay ◽  
M. R. Jackson ◽  
P. R. Subramanian
Keyword(s):  
High Temperature ◽  
Refractory Metal ◽  
Metal Silicide ◽  
In Situ Composites

Precrystalline P3HT nanowires: growth-controllable solution processing and effective molecular packing transfer to thin-film

CrystEngComm ◽  
2022 ◽  
Author(s):  
Seon-Mi Jin ◽  
Jun Ho Hwang ◽  
Jung Ah Lim ◽  
Eunji Lee
Keyword(s):  
Thin Film ◽  
Conjugated Polymers ◽  
Self Assembly ◽  
Optoelectronic Devices ◽  
Molecular Packing ◽  
Solution Processing ◽  
Roll To Roll ◽  
Nanowires Growth ◽  
Fundamental Research ◽  
Significant Attention

Solution-processable precrystalline nanowires (NWs) of conjugated polymers (CPs) have garnered significant attention in fundamental research based on crystallization-driven self-assembly and in the roll-to-roll fabrication of optoelectronic devices such as organic...

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