Modeling of Complementary Resistive Switches

2017 ◽  
pp. 315-325
Author(s):  
E. Linn ◽  
S. Menzel ◽  
R. Rosezin ◽  
U. Böttger ◽  
R. Bruchhaus ◽  
...  
Keyword(s):  
Resistive Switches

Resistive Switches and Memories from Silicon Oxide

Nano Letters ◽  
2010 ◽  
Vol 10 (10) ◽  
pp. 4105-4110 ◽  
Author(s):  
Jun Yao ◽  
Zhengzong Sun ◽  
Lin Zhong ◽  
Douglas Natelson ◽  
James M. Tour
Keyword(s):  
Silicon Oxide ◽  
Resistive Switches

Solution Processed Silver Sulfide Filament Memories

2008 ◽  
Vol 1113 ◽  
Author(s):  
Shong Yin ◽  
Steven K. Volkman ◽  
Vivek Subramanian
Keyword(s):  
Bath Temperature ◽  
Silver Sulfide ◽  
Film Structure ◽  
Process Conditions ◽  
Printable Electronics ◽  
Plastic Substrates ◽  
Bulk Silver ◽  
Non Volatile Memory ◽  
Resistive Switches ◽  
Memory Applications

ABSTRACTIonic resistive switches are emerging as a potential successor for flash in non!volatile memory applications. In ionic switches, metal cations migrate through a solid electrolyte forming filaments on an inert cathode that results in an abrupt increase in conductivity. This process is reversible, and the switches may be reverted to a low!conductive state. These switches have low transition voltages and fast read speed. The low switching energy potentially makes them more scalable than many other resistive memories. Silver Sulfide Resistive switches have been fabricated by sulfidizing evaporated silver films in Sulfur solutions. XPS is used to quantify stoichiometry of resultant films. SEM and AFM indicate that surface roughness increases with sulfidation time as the bulk silver film is consumed in forming the silver sulfide. XRD has confirmed presence of the acanthite phase of silver sulfide in the films. The entire process is performed at temperatures below 200C, so the devices are potentially stackable over conventional CMOS substrates in a BEOL process, and are applicable to printable electronics on plastic substrates. Initial characteristics measured on these cells are very promising, exhibiting low energy switching and good programming margins. Write/Erase voltages for cells were about 400mV and !200mV respectively. Ron/Roff ratios range from 10 to as high as 10, 000 depending on process conditions. Impact of bath concentration, bath temperature and post!annealing on the silver sulfide film structure are studied. Ionic switching is demonstrated in the films.

Stacked resistive switches for AND/OR logic gates

2017 ◽  
Vol 132 ◽  
pp. 45-48
Author(s):  
Myung Ju Kim ◽  
Kyung Rock Son ◽  
Ju Hyun Park ◽  
Tae Geun Kim
Keyword(s):  
Logic Gates ◽  
Resistive Switches

HfOx complementary resistive switches

2016 ◽  
Author(s):  
Marina Labalette ◽  
Serge Ecoffey ◽  
Simon Jeannot ◽  
Abdelkader Souifi ◽  
Dominique Drouin
Keyword(s):  
Resistive Switches

scholarly journals Nanobatteries in redox-based resistive switches require extension of memristor theory

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
I. Valov ◽  
E. Linn ◽  
S. Tappertzhofen ◽  
S. Schmelzer ◽  
J. van den Hurk ◽  
...  
Keyword(s):  
Resistive Switches

scholarly journals Logic Computing with Stateful Neural Networks of Resistive Switches

2018 ◽  
Vol 30 (38) ◽  
pp. 1802554 ◽  
Author(s):  
Zhong Sun ◽  
Elia Ambrosi ◽  
Alessandro Bricalli ◽  
Daniele Ielmini
Keyword(s):  
Neural Networks ◽  
Resistive Switches

scholarly journals Picosecond multilevel resistive switching in tantalum oxide thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Ulrich Böttger ◽  
Moritz von Witzleben ◽  
Viktor Havel ◽  
Karsten Fleck ◽  
Vikas Rana ◽  
...  
Keyword(s):  
Data Storage ◽  
Physical Parameters ◽  
Switching Speed ◽  
Charging Time ◽  
Wide Range ◽  
Resistive Switches ◽  
High Scalability ◽  
Increasing Demand ◽  
Kinetics Of ◽  
Capacitive Charging

Abstract The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resistance states. For reliable programming, the underlying physical parameters need to be understood. We reveal that the programmable resistance states are linked to internal series resistances and the fundamental nonlinear switching kinetics. The switching kinetics of $$\hbox {Ta}_2 \hbox {O}_5$$ Ta 2 O 5 -based cells was investigated in a wide range over 15 orders of magnitude from 10$$^5$$ 5  s to 250 ps. The capacitive charging time of our device limits the direct observation of the set time below 770 ps, however, we found indication for an intrinsic switching speed of 10 ps at a stimulus of 3 V. On all time scales, multi-bit data storage capabilities were demonstrated. The elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications.

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