scholarly journals Synthesis of Metal Nanoclusters in Dielectric Matrices by Ion Implantation: Plasmonic Aspects

Nanomaterials ◽  
2013 ◽  
pp. 185-214
Keyword(s):  
Ion Implantation ◽  
Metal Nanoclusters

Characterization of Nanoclusters in MgO Created by Means of Ion Implantation.

2003 ◽  
Vol 792 ◽  
Author(s):  
M.A. van Huis ◽  
A. van Veen ◽  
H. Schut ◽  
B.J. Kooi ◽  
J.Th.M. De Hosson
Keyword(s):  
Optical Absorption ◽  
Ion Implantation ◽  
Noble Gas ◽  
Optical Absorption Spectroscopy ◽  
Metal Nanoclusters ◽  
Absorption Bands ◽  
Cross Sectional ◽  
Salt Structure ◽  
Scherrer Formula ◽  
Gas Clusters

ABSTRACTMetal nanoclusters (NCs) of lithium, zinc, silver and gold embedded in MgO were created by means of ion implantation of Li, Zn, Ag and Au ions into single crystals of MgO(100) and subsequent thermal annealing. Nanoclusters of the compound semiconductor CdSe were obtained by implantation of both Cd and Se ions. Solid noble gas clusters were formed by Kr ion implantation. Optical and structural properties of the NCs were investigated using optical absorption spectroscopy (OAS), high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The mean nanocluster size is estimated from the broadening of the Mie plasmon optical absorption bands using the Doyle formula. These results are compared with the NC size as obtained from XRD (using the Scherrer formula) and from direct XTEM observations. The three methods are found to be in reasonable agreement with a mean size of 4.0 and 10 nm found for the Au and Ag clusters, respectively. Using TEM observations, the relative interface energies of MgO//Au and MgO//Ag interfaces are also determined. In the case of MgO//Au, they are found not to be in agreement with theoretical predictions in the literature. CdSe nanoclusters were found to adopt different crystal structures dependent on the size. Small ones (<5 nm) appear to have a rock salt structure, larger ones the sphalerite structure. The solid krypton NC's are under high pressure. The pressure of individual Krypton bubbles was determined from the moiré fringes

SYNTHESIS OF ALLOY METAL NANOCLUSTERS IN SILICA GLASS BY SEQUENTIAL ION IMPLANTATION

2007 ◽  
Vol 06 (06) ◽  
pp. 423-430 ◽  
Author(s):  
B. JOSEPH ◽  
H. P. LENKA ◽  
P. K. KUIRI ◽  
D. P. MAHAPATRA ◽  
R. KESAVAMOORTHY
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Metallic Nanoparticles ◽  
Rutherford Backscattering Spectrometry ◽  
Low Frequency ◽  
Peak Position ◽  
Negative Ion ◽  
Metal Nanoclusters ◽  
Cross Sectional ◽  
The Matrix

High fluence low energy negative ion implantation has been used to synthesize embedded metal nanoclusters of Au , Ag and Sb in silica glass. The Au - and Ag -implanted samples showed peaks, corresponding to surface plasmon resonance (SPR) in the optical absorption (OA) spectra, confirming the formation of metallic nanoparticles in the matrix. No SPR peak was observed in case of Sb -implanted samples which is attributed to the absence of pure metallic precipitates which could be detected in the OA spectrum. Low frequency Raman scattering (LFRS) measurements also confirm this. Cross-sectional transmission electron microscopy has been used to infer about the size distribution of the nanoparticles. Sequential implantations of Au and Ag or Au and Sb have been found to result in SPR peaks at locations in between those for nanoparticles of the constituent atoms, indicating the formation of alloy nanoparticles in the system. In case of the Au + Ag system, Rutherford backscattering spectrometry has been used to infer about the composition of the nanoparticles in terms of the concentrations of the metallic constituents. A direct, one-to-one correspondence between the SPR peak position and composition has been observed.

scholarly journals Third Order Optical Nonlinearity of Colloidal Metal Nanoclusters Formed by MeV Ion Implantation

1997 ◽  
Author(s):  
S. S. Sarkisov ◽  
E. Williams ◽  
M. Curley ◽  
D. Ila ◽  
P. Venkateswarlu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Nonlinearity ◽  
Metal Nanoclusters ◽  
Third Order ◽  
Colloidal Metal

Metal-Alloy Nanocluster Formation in Silica Glass by Sequential Ion Implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
G. Battaglin ◽  
E. Cattaruzza ◽  
F. Gonella ◽  
F. D'Acapito ◽  
C. de Julian Fernandez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Analytical Techniques ◽  
Metal Species ◽  
Metal Nanoclusters ◽  
Transition Elements ◽  
Transmission Electron ◽  
Integrated Optical ◽  
Integrated Optical Devices ◽  
X Ray Absorption

AbstractSequential ion implantation of two metal species in silica glass may give rise to the formation of alloy metal nanoclusters. Composite materials with peculiar optical properties can be therefore fabricated, with application in integrated-optical devices. In the presented experiments, different couples of transition elements were sequentially implanted in a silica glass. The resulting systems, in some cases after annealing in either reducing or oxidizing atmosphere, were studied by several analytical techniques, such as transmission electron microscopy and X-ray absorption spectroscopy. The formation of different alloy nanoclusters was evidenced, together with the cluster crystalline structure and the chemical environment of the dopant species.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Sign in / Sign up

Export Citation Format

Share Document