- Optical Properties of MgZnO/ZnO Heterostructures Grown on Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

2012 ◽  
pp. 240-273
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sapphire Substrates

Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
S. V. Novikov ◽  
L. X. Zhao ◽  
C. T. Foxon ◽  
B. Ja. Ber ◽  
A. P. Kovarsky ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Strong Influence ◽  
Molecular Beam ◽  
Modulation Doping ◽  
Sapphire Substrates ◽  
Secondary Ions ◽  
Spectroscopy Studies ◽  
Arsenic Incorporation ◽  
Secondary Ion

ABSTRACTGaN layers periodically-doped with arsenic were grown by plasma-assisted molecular beam epitaxy on sapphire substrates. Secondary ion mass spectroscopy studies using different secondary ions clearly confirmed the existence of As-modulation in the GaN/GaN:As periodically-doped structures, however, the degree of As-modulation is still under discussion. The use of modulation doping with As has a strong influence on the optical properties of GaN/GaN:As structures.

Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy

1999 ◽  
Vol 85 (12) ◽  
pp. 8386-8399 ◽  
Author(s):  
S. Tripathy ◽  
R. K. Soni ◽  
H. Asahi ◽  
K. Iwata ◽  
R. Kuroiwa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sapphire Substrates ◽  
Gas Source

Structure and Optical Properties of ZnO Nanowire Arrays Grown by Plasma-assisted Molecular Beam Epitaxy

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays
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