Silicon MEMS Resonators for Timing Applications

2017 ◽  
pp. 79-107 ◽  
Author(s):  
Bongsang Kim ◽  
Matthew A. Hopcroft ◽  
Rob N. Candler
Keyword(s):  
Mems Resonators

scholarly journals High-Q MEMS Resonators for Laser Beam Scanning Displays

Micromachines ◽  
2012 ◽  
Vol 3 (2) ◽  
pp. 509-528 ◽  
Author(s):  
Ulrich Hofmann ◽  
Joachim Janes ◽  
Hans-Joachim Quenzer
Keyword(s):  
Laser Beam ◽  
Beam Scanning ◽  
High Q ◽  
Mems Resonators ◽  
Laser Beam Scanning

scholarly journals A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Cmos Technology ◽  
Open Loop ◽  
Transimpedance Amplifier ◽  
Mems Devices ◽  
Monolithically Integrated ◽  
Mems Resonators ◽  
Electromechanical Performance ◽  
Cmos Mems ◽  
Promising Solution ◽  
On Chip

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

Heterogeneously Integrated Aluminum Nitride MEMS Resonators and Filters

2021 ◽  
pp. 113-130
Author(s):  
Enes Calayir ◽  
Srinivas Merugu ◽  
Jaewung Lee ◽  
Navab Singh ◽  
Gianluca Piazza
Keyword(s):  
Aluminum Nitride ◽  
Mems Resonators

Fully CMOS integrated bandpass filter based on mechanical coupling of two RF MEMS resonators

2010 ◽  
Vol 46 (9) ◽  
pp. 640 ◽  
Author(s):  
J. Giner ◽  
A. Uranga ◽  
F. Torres ◽  
E. Marigó ◽  
N. Barniol
Keyword(s):  
Bandpass Filter ◽  
Rf Mems ◽  
Mechanical Coupling ◽  
Mems Resonators

Design of a MEMS Resonant Wind Sensor on Airplane Wing

2013 ◽  
Vol 562-565 ◽  
pp. 436-440
Author(s):  
Chao Wei Si ◽  
Guo Wei Han ◽  
Jin Ning ◽  
Wei Wei Zhong ◽  
Fu Hua Yang
Keyword(s):  
High Vacuum ◽  
Pressure Change ◽  
Wind Pressure ◽  
Damping Factor ◽  
Deep Reactive Ion Etching ◽  
Mems Resonator ◽  
Mems Resonators ◽  
Element Simulation ◽  
Airplane Wing ◽  
Soi Substrates

A new kind of wind sensor made up of MEMS resonators is designed in the paper capable of sensing the lift, the resistance and the turbulence of airplane wings by mounting on the surface. The designed wind sensor is made up of four MEMS wind pressure gauges fixed around a square wind resistance block which used to block the wind to change the wind pressure on the surface, and the change of wind pressure is detected by MEMS wind pressure gauges to reveal the air condition on the surface of the airplane wings. As known, a MEMS resonator is a second-order resonant system whose damping factor is mainly dependent on the air pressure, and the characteristic is often used to detecting the airtightness of a sealed chamber for the damping factor is sensitive under high vacuum, while a MEMS resonator with the damping factor sensitive at atmospheric pressure is designed in this paper for sensing wind pressure change, and the MEMS resonator is manufactured on SOI substrates with deep reactive ion etching technology. Also relations between the wind pressure change and the wind speed around a block at atmosphere is revealed by finite element simulation. Compared to traditional wind sensors such as anemometers and Venturi tubes, the designed MEMS wind sensor with a very small size is suitable to mount on different zones of a wing with a large amount to monitor the air condition and have less influence on air flow.

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