Tungsten Hexafluoride (WF6)

2011 ◽  
pp. 509-510
Keyword(s):  
Tungsten Hexafluoride

Particle characterization of CVD tungsten metallization for 64 MBIT DRAM

1991 ◽  
Vol 49 ◽  
pp. 896-897
Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling
Keyword(s):  
Chemical Vapor ◽  
Device Performance ◽  
Particle Characterization ◽  
Particle Generation ◽  
Tungsten Hexafluoride ◽  
Homogeneous Particle ◽  
Multiple Levels ◽  
Circuit Density ◽  
Sources Of Contamination

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.

SIMS depth profiles study of WSi structures produced via the silicon reduction of tungsten hexafluoride

1993 ◽  
Vol 227 (2) ◽  
pp. 167-176 ◽  
Author(s):  
J.C. Dupuy ◽  
A. Essaadani ◽  
A. Sibai ◽  
C. Dubois ◽  
F.C. Dassapa ◽  
...  
Keyword(s):  
Depth Profiles ◽  
Tungsten Hexafluoride

The reactions of dimethyl sulphoxide with sulphur tetrafluoride and tungsten hexafluoride

1970 ◽  
Vol 32 (5) ◽  
pp. 1745-1747 ◽  
Author(s):  
J.I. Darragh ◽  
A.M. Noble ◽  
D.W.A. Sharp ◽  
J.M. Winfield
Keyword(s):  
Dimethyl Sulphoxide ◽  
Tungsten Hexafluoride ◽  
And Tungsten

Characteristics of Selective Lpcvd W Films By Silicon Reduction

1986 ◽  
Vol 71 ◽  
Author(s):  
R. V. Joshi ◽  
D. A. Smith
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Annealing Temperature ◽  
Film Surface ◽  
Silicide Formation ◽  
X Ray ◽  
Tungsten Hexafluoride ◽  
Deposited Film ◽  
Deposited Films ◽  
Oxygen Impurities

AbstractThe characteristics of Selective LPCVD tungsten films produced by silicon reduction of tungsten hexafluoride are presented. The tungsten films deposited using Si(100), Si(111) and polysilicon undoped and doped substrates are analyzed by X-RAY, TEM, RBS, AES, SIMS and SEM. The as deposited bcc tungsten films are polycrystalline with a grain size 80 - 100Å. The effect of annealing temperature and time on the crystal structure of films was studied. Tungsten reacts to form tungsten silicide at 600°C. The silicide grain size is of the order of 100 - 200Å at 600°C and increases gradually to 400 - 500Å at 1000°C. The oxygen impurities in the film retard the silicide formation further at 1000°C. Silicon from the substrate out-diffuses to the film surface and reacts with the presence of oxygen impurities in the annealing ambient to form Si-O at 1000°C. As deposited film resistivities of 130-140 micro-ohm-cm are achieved reproducibly and reach 60-70 micro-ohm-cm after 1000°C annealing in nitrogen or argon ambient. The impurities H, C, O and F are found in the as deposited films.

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