Wafer Bonding Techniques

2011 ◽  
pp. 43-70
Author(s):  
Bioh Kim ◽  
Thorsten Matthias ◽  
Viorel Dragoi ◽  
Markus Wimplinger ◽  
Paul Lindner
Keyword(s):  
Wafer Bonding

Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding

2020 ◽  
Author(s):  
L. Peng ◽  
S-W Kim ◽  
S. Iacovo ◽  
J. de Vos ◽  
B. Schoenaers ◽  
...  
Keyword(s):  
Wafer Bonding

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Chemical Mechanical Planarization Technology for Si Wafer Bonding

2019 ◽  
Vol 33 (10) ◽  
pp. 153-156
Author(s):  
JongHeun Lim ◽  
BoUn Yoon ◽  
KyungHyun Kim ◽  
YoungSun Ko ◽  
ChangJin Kang
Keyword(s):  
Wafer Bonding ◽  
Chemical Mechanical Planarization ◽  
Si Wafer

Silicon-to-silicon wafer bonding using evaporated glass

1998 ◽  
Vol 70 (1-2) ◽  
pp. 179-184 ◽  
Author(s):  
Steen Weichel ◽  
Roger de Reus ◽  
Michael Lindahl
Keyword(s):  
Silicon Wafer ◽  
Wafer Bonding

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas

Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

2009 ◽  
Vol 156-158 ◽  
pp. 199-204
Author(s):  
Hiroaki Kariyazaki ◽  
Tatsuhiko Aoki ◽  
Kouji Izunome ◽  
Koji Sueoka
Keyword(s):  
Molecular Simulation ◽  
Wafer Bonding ◽  
Crystal Orientation ◽  
High Performance ◽  
Cmos Technology ◽  
Experimental Results ◽  
Interfacial Structure ◽  
Atomic Configuration ◽  
Promising Technology ◽  
Bonded Interface

Hybrid crystal orientation technology (HOT) substrates comprised of Si (100) and (110) surface orientation paralleling each <110> direction attract considerable attentions as one of the promising technology for high performance bulk CMOS technology. Although HOT substrates are fabricated by wafer bonding of Si (110) and Si (100) surfaces, it is not clear the atomic configuration of interfacial structure. Furthermore, the possibility for the interface to be an effective gettering source of impurity metals was not well studied. In this paper, we studied the interfacial structure and gettering efficiency of the atomic bonded interface by molecular simulations. The results indicate that the simulated atomic configuration and gettering efficiency of the bonded interface agreed well with the experimental results.

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