Fluid flow and solute segregation in crystal growth from the melt

2002 ◽  
pp. 446-502
Keyword(s):  
Fluid Flow ◽  
Crystal Growth ◽  
Solute Segregation

Fluid flow and solute segregation in EFG crystal growth process

2005 ◽  
Vol 275 (1-2) ◽  
pp. e799-e805 ◽  
Author(s):  
O. Bunoiu ◽  
I. Nicoara ◽  
J.L. Santailler ◽  
T. Duffar
Keyword(s):  
Fluid Flow ◽  
Crystal Growth ◽  
Growth Process ◽  
Solute Segregation ◽  
Crystal Growth Process

Simulation of fluid flow during protein crystal growth in magnetic fields

2011 ◽  
Vol 110 (4) ◽  
pp. 043903 ◽  
Author(s):  
H. Okada ◽  
N. Hirota ◽  
S. Matsumoto ◽  
H. Wada
Keyword(s):  
Fluid Flow ◽  
Crystal Growth ◽  
Magnetic Fields ◽  
Protein Crystal ◽  
Protein Crystal Growth

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

Effect of Crucible Conductivity on Large Diameter, Low Gravity, Bridgman Crystal Growth

1999 ◽  
Author(s):  
Vivek Sahai ◽  
John W. Williamson
Keyword(s):  
Crystal Growth ◽  
Large Diameter ◽  
Solute Segregation ◽  
Quasi Steady State ◽  
Governing Equations ◽  
Low Gravity ◽  
Growth System ◽  
Crystal Diameter ◽  
Bridgman Crystal Growth ◽  
Ampoule Wall

Abstract This study examines the effect of crucible conductivity in minimizing convection and solute segregation in a Bridgman crystal growth system. Crystal diameter to length ratios from 0.5 to 2.5 are considered. A quasi-steady state numerical method is used to model the directional solidification of gallium doped germanium. The coupled governing equations for the melt, solidified crystal, and the ampoule wall are solved subject to appropriate boundary and interface conditions to determine the velocity, temperature, and concentration distributions. Results are presented at reduced gravity and include the effects of reducing the dimensionless ampoule conductivity from 0.67 to 0.05.

scholarly journals Back-Diffusion In Crystal Growth. Eutectics

2015 ◽  
Vol 60 (3) ◽  
pp. 2403-2407 ◽  
Author(s):  
W. Wołczyński
Keyword(s):  
Differential Equation ◽  
Crystal Growth ◽  
Current Model ◽  
Solute Segregation ◽  
Solidification Path ◽  
Back Diffusion ◽  
Eutectic Alloys ◽  
Equilibrium Solidification ◽  
Solid Liquid ◽  
Non Equilibrium

Abstract Solute segregation/redistribution model for some eutectic alloys is presented. The differential equation for the solute micro-segregation during solidification accompanied by the back-diffusion is formulated. The solution to this equation results in the definitions of: solidification path, solid/liquid (s/l) interface path and redistribution path. An equation for the estimation of the amount of equilibrium and non-equilibrium precipitates is also delivered. It is proved that the current model is universal one. Thus, the model reduces perfectly, mathematically to both description of diffusion-less solidification and model of equilibrium solidification.

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