Wide-Band Semiconductors for Direct-Conversion Nuclear Batteries

2002 ◽  
Author(s):  
Y Rebane ◽  
Y Shreter ◽  
N Bochkareva
Keyword(s):  
Wide Band ◽  
Direct Conversion ◽  
Nuclear Batteries

A wide-band direct conversion receiver with on-chip A/D converters

2002 ◽  
Author(s):  
A. Parssinen ◽  
J. Jussila ◽  
J. Ryynanen ◽  
L. Sumanen ◽  
K. Kivekas ◽  
...  
Keyword(s):  
Wide Band ◽  
Direct Conversion ◽  
On Chip

A wide-band noise-cancelling direct-conversion balun-LNA-mixer front-end

2018 ◽  
Vol 96 (1) ◽  
pp. 67-78 ◽  
Author(s):  
Hamid Karrari ◽  
Esmaeil Najafi Aghdam ◽  
Hassan Faraji Baghtash
Keyword(s):  
Wide Band ◽  
Direct Conversion ◽  
Front End ◽  
Band Noise ◽  
Noise Cancelling ◽  
Wide Band Noise

Study on Semiconductor Materials with Interaction of Beta Radiation with GaN

2013 ◽  
Vol 703 ◽  
pp. 63-66 ◽  
Author(s):  
Hai Sheng San ◽  
Shu Lin Yao ◽  
Qiang Zhang ◽  
Ran Bin Chen
Keyword(s):  
Monte Carlo Simulation ◽  
Energy Deposition ◽  
Energy Requirement ◽  
Wide Band ◽  
Direct Conversion ◽  
Beta Radiation ◽  
Semiconductor Materials ◽  
Wide Band Gap ◽  
Beta Particles ◽  
Micro Systems

Wide-band gap semiconductor GaN is a promising material for direct-conversion nuclear micro-batteries to meet energy requirement for micro-systems. The properties of semiconductor GaN materials were studied by the interaction of beta radiation with GaN. By the Monte Carlo simulation, the trajectories of incident beta particles in GaN and the total energy deposition were obtained, which provide an optimal design inp-njunction width of GaN.

A 2-GHz wide-band direct conversion receiver for WCDMA applications

1999 ◽  
Vol 34 (12) ◽  
pp. 1893-1903 ◽  
Author(s):  
A. Parssinen ◽  
J. Jussila ◽  
J. Ryynanen ◽  
L. Sumanen ◽  
K.A.I. Halonen
Keyword(s):  
Wide Band ◽  
Direct Conversion
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