Silicon Memories Using Quantum and Single-Electron Effects

2005 ◽  
pp. 195-221
Author(s):  
Sandip Tiwari
Keyword(s):  
Single Electron ◽  
Electron Effects

Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Single Electron ◽  
Si Nanocrystal ◽  
Nanocrystal Memory ◽  
Electron Effects

SINGLE ELECTRON DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 165-207 ◽  
Author(s):  
DORAN D. SMITH
Keyword(s):  
Tunnel Junctions ◽  
Electron Flow ◽  
Superconducting Devices ◽  
Time Correlation ◽  
Single Electron ◽  
Net Charge ◽  
Flow Through ◽  
Single Electron Devices ◽  
Electron Devices ◽  
Electron Effects

In the mid 1980s Averin and Likharev predicted that with the use of ultrasmall tunnel junctions a time correlation of electron flow through a junction could be observed, and permit the measurement of the effect of a net charge of less than one electron on the junction. Both effects were soon experimentally verified, and since that time there has been an explosion of work in the filed of single electron devices. This chapter reviews the fundamental concepts behind the operation of such devices. it then describes some of the single electron effects studied in semiconductors. Superconducting devices are then constrasted to the semiconductor and the normal metal single electron devices. The details of some current applications are described, and a thumbnail sketch of current fabrication methods is given.

Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs

2011 ◽  
pp. 131-139
Author(s):  
Takuya Kaizawa ◽  
Mingyu Jo ◽  
Masashi Arita ◽  
Akira Fujiwara ◽  
Kenji Yamazaki ◽  
...  
Keyword(s):  
Full Adder ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Nanodot Array ◽  
Half Adder ◽  
Electron Effects ◽  
Inputs And Outputs

A highly functional Si nanodot array device that operates by means of single-electron effects was experimentally demonstrated. The device features many input gates, and many outputs can be attached. A nanodot array device with three input gates and two output terminals was fabricated on a silicon-on-insulator wafer using conventional Si MOS processes. Its feasibility was demonstrated by its operation as both a half adder and a full adder when the operation voltage was carefully selected.

Room-temperature single-electron effects in silicon nanocrystal memories

2005 ◽  
Vol 87 (18) ◽  
pp. 182106 ◽  
Author(s):  
C. Pace ◽  
F. Crupi ◽  
S. Lombardo ◽  
C. Gerardi ◽  
G. Cocorullo
Keyword(s):  
Room Temperature ◽  
Single Electron ◽  
Silicon Nanocrystal ◽  
Electron Effects

scholarly journals Single-electron effects in a coupled dot-ring system

2004 ◽  
Vol 69 (24) ◽  
Author(s):  
L. Meier ◽  
A. Fuhrer ◽  
T. Ihn ◽  
K. Ensslin ◽  
W. Wegscheider ◽  
...  
Keyword(s):  
Ring System ◽  
Single Electron ◽  
Electron Effects

Single-electron effects in slim semiconductor superlattices

1998 ◽  
Vol 73 (14) ◽  
pp. 1982-1984 ◽  
Author(s):  
T. Schmidt ◽  
R. J. Haug ◽  
K. v. Klitzing ◽  
K. Eberl
Keyword(s):  
Single Electron ◽  
Semiconductor Superlattices ◽  
Electron Effects

Conductance in Quantum Boxes: Interference and Single Electron Effects

1995 ◽  
pp. 201-216 ◽  
Author(s):  
A. S. Dzurak ◽  
M. Field ◽  
J. E. F. Frost ◽  
I. M. Castleton ◽  
C. G. Smith ◽  
...  
Keyword(s):  
Single Electron ◽  
Electron Effects

scholarly journals Single-electron effects in heavily doped polycrystalline silicon nanowires

1998 ◽  
Vol 73 (8) ◽  
pp. 1113-1115 ◽  
Author(s):  
Andrew C. Irvine ◽  
Zahid A. K. Durrani ◽  
Haroon Ahmed ◽  
Serge Biesemans
Keyword(s):  
Silicon Nanowires ◽  
Polycrystalline Silicon ◽  
Single Electron ◽  
Heavily Doped ◽  
Electron Effects
Sign in / Sign up

Export Citation Format

Share Document