MeV Ion Beam Analytical Methods

2005 ◽  
pp. 103-132 ◽  
Author(s):  
Ian Vickridge ◽  
Didier Schmaus
Keyword(s):  
Analytical Methods ◽  
Ion Beam

Nondestructive Elemental Diagnostics of the Fuel-Rod Cladding Surface by the Ion-Beam and X-Ray Analytical Methods

2021 ◽  
Vol 64 (1) ◽  
pp. 63-70
Author(s):  
V. K. Egorov ◽  
E. V. Egorov ◽  
B. A. Kalin ◽  
D. A. Safonov
Keyword(s):  
Analytical Methods ◽  
Ion Beam ◽  
X Ray ◽  
Fuel Rod

scholarly journals Integrating Non-Destructive Ion Beam Analysis Methods and AMS Radiocarbon Dating for the Study of Ancient Bronze Statues

Radiocarbon ◽  
2012 ◽  
Vol 54 (3-4) ◽  
pp. 801-812 ◽  
Author(s):  
Gianluca Quarta ◽  
Lucio Calcagnile ◽  
Massimo Vidale
Keyword(s):  
Analytical Methods ◽  
Gamma Ray ◽  
Ion Beam ◽  
Compositional Analysis ◽  
Particle Accelerators ◽  
Accelerator Facility ◽  
Ion Beam Analysis ◽  
Ams Radiocarbon Dating ◽  
Beam Analysis ◽  
Wide Range

Analytical methods based on particle accelerators are widely used in cultural heritage diagnostics and archaeological sciences from the absolute dating of organic materials by means of radiocarbon accelerator mass spectrometry (AMS) to the analysis of the elemental composition of a wide range of materials (metals, obsidians, pottery) via ion beam analysis (IBA) techniques. At CEDAD (Centre for Dating and Diagnostics), the accelerator facility of the University of Salento, AMS 14C dating and PIXE (particle-induced X-ray emission)-PIGE (particle-induced gamma-ray emission) compositional analysis in external beam mode are combined to study certain archaeological materials. We present a review of the combined application of these analytical methods in the study of casting cores of the Riace bronzes, 2 classical Greek statues of extraordinary importance for the history of art.

How Xe and Ga FIB Differ in Inducing Lateral Damage on TEM Samples

2015 ◽  
Author(s):  
Tomáš Hrnčíř ◽  
Jozef Vincenc Oboňa ◽  
Martin Petrenec ◽  
Jan Michalička ◽  
Christian Lang
Keyword(s):  
Sample Preparation ◽  
Analytical Methods ◽  
Beam Energy ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Amorphous Layer ◽  
Sample Structure ◽  
The Difference ◽  
Final Cleaning

Abstract Reducing FIB induced damage on TEM samples is very important in order to preserve the sample structure, especially on modern semiconductor devices. We have compared the damage caused by Ga ion beam to our measurements of the damage caused by Xe ion beam and came to the conclusion that Xe ion beam induced damage is significantly lower at 30 keV beam energy. This has been proven by several independent analytical methods. Our results show that TEM sample preparation by Xe ion beam causes less amorphous damage and increase the quality of the lamella and in many cases it will allow to prepare the lamella by finishing it even at 30 keV, without the final cleaning step at the low beam energy. Final polishing step by Xe beam at beam energy 3 keV further reduces the amorphous layer, but the difference against Ga beam is not so significant like at 30 keV.

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