Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995

2020 ◽  
Author(s):  
Woo
Keyword(s):  
Compound Semiconductors ◽  
Cheju Island

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

More Se Vacancies in Sb 2 Se 3 under Se‐Rich Conditions: An Abnormal Behavior Induced by Defect‐Correlation in Compensated Compound Semiconductors

Small ◽  
2021 ◽  
pp. 2102429
Author(s):  
Menglin Huang ◽  
Zenghua Cai ◽  
Shanshan Wang ◽  
Xin‐Gao Gong ◽  
Su‐Huai Wei ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Abnormal Behavior

The geological age and paleoenvironment of the lower Seogwipo Formation, Cheju Island, Korea

1999 ◽  
Vol 3 (4) ◽  
pp. 181-190 ◽  
Author(s):  
Baohua Li ◽  
Byong-Kwon Park ◽  
Dongseon Kim ◽  
Han Jun Woo
Keyword(s):  
Geological Age ◽  
Cheju Island ◽  
Seogwipo Formation

Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies

Vacuum ◽  
2009 ◽  
Vol 84 (1) ◽  
pp. 37-40 ◽  
Author(s):  
A. Bozanic ◽  
Z. Majlinger ◽  
M. Petravic ◽  
Q. Gao ◽  
D. Llewellyn ◽  
...  
Keyword(s):  
Molecular Nitrogen ◽  
Compound Semiconductors ◽  
Absorption And Emission

A Standards-Based Method to Determine Elemental Compositions using Energy Dispersive X-Ray Spectrometry for Compound Semiconductors

2012 ◽  
Vol 18 (S2) ◽  
pp. 1046-1047 ◽  
Author(s):  
M. Rathi ◽  
P. Ahrenkiel ◽  
J. Carapella ◽  
M. Wanlass
Keyword(s):  
Compound Semiconductors ◽  
Energy Dispersive ◽  
X Ray ◽  
Elemental Compositions

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

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