Compensating for temperature variations in time-lapse electrical resistivity difference imaging

Geophysics ◽  
2010 ◽  
Vol 75 (4) ◽  
pp. WA51-WA59 ◽  
Author(s):  
Kevin Hayley ◽  
L. R. Bentley ◽  
A. Pidlisecky

Variations in temperature during time-lapse electrical resistivity imaging (ERI) surveys introduce changes in electrical conductivity (EC). When the goal of the time-lapse ERI survey is to image changes in EC due to changes in saturation or pore water salinity, compensation must be made for the effect of temperature variations. A temperature-compensation method can approximate time-lapse ERI data with the effect of temperature variations removed. First uncompensated ERI data are inverted. The inversion model then is adjusted to a standard temperature image. Forward simulations are performed using the uncompensated inversion and the standard temperature equivalent model. The temperature-compensated simulated resistance data are subtracted from the uncompensated simulated resistance data, forming data correction terms. The data correction terms then are subtracted from the measured data to yield temperature-compensated data. Using the temperature-compensated data, inversions have been carried out on two synthetic data sets and a field example. Differencing two temperature-compensated data inversions is found to be superior to differencing two postinversion standard temperature equivalent images. Temperature compensation on the data allows temperature corrections to be applied to time-lapse difference inversion schemes and hydrogeophysical inversion where postinversion temperature-correction methods are not easily applied.

2009 ◽  
Vol 7 (5-6) ◽  
pp. 475-486 ◽  
Author(s):  
G. Cassiani ◽  
A. Godio ◽  
S. Stocco ◽  
A. Villa ◽  
R. Deiana ◽  
...  

2021 ◽  
Author(s):  
Dharmender Nishad ◽  
Kaushal Nigam ◽  
Satyendra Kumar

Abstract Temperature-induced performance variation is one of the main concerns of the conventional stack gate oxide double gate tunnel field-effect transistor (SGO-DG-TFET). In this regard, we investigate the temperature sensitivity of extended source double gate tunnel field-effect transistor (ESDG-TFET). For this, we have analyzed the effect of temperature variations on the transfer characteristics, analog/RF, linearity and distortion figure of merits (FOMs) using technology computer aided design (TCAD) simulations. Further, the temperature sensitivity performance is compared with conventional SGO-DG-TFET. The comparative analysis shows that ESDG-TFET is less sensitive to temperature variations compared to the conventional SGO-DG-TFET. Therefore, this indicates that ESDG-TFET is more reliable for low-power, high-frequency applications at a higher temperature compared to conventional SGO-DG-TFET.


Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3685 ◽  
Author(s):  
Marcin Adamczyk ◽  
Paweł Liberadzki ◽  
Robert Sitnik

This paper presents the results of several studies concerning the effect of temperature on digital cameras. Experiments were performed using three different camera models. The presented results conclusively demonstrate that the typical camera design does not adequately take into account the effect of temperature variation on the device’s performance. In this regard, a modified camera design is proposed that exhibits a highly predictable behavior under varying ambient temperature and facilitates thermal compensation. A novel temperature compensation method is also proposed. This compensation model can be applied in almost every existing camera application, as it is compatible with every camera calibration model. A two-dimensional (2D) and three-dimensional (3D) application of the proposed compensation model is also described. The results of the application of the proposed compensation approach are presented herein.


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