Comparative study of ZnTe thin films prepared using close space sublimation (CSS) and electron beam evaporation (EBE) thin film fabrication techniques for optoelectronic applications

2013 ◽  
Vol 29 (1) ◽  
pp. 29-35 ◽  
Author(s):  
M. U. Farooq ◽  
M. Khan ◽  
A. Faraz ◽  
A. Maqsood ◽  
W. Ahmad ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Comparative Study ◽  
Electron Beam Evaporation ◽  
Thin Film Fabrication ◽  
Close Space Sublimation ◽  
Film Fabrication ◽  
Space Sublimation ◽  
Znte Thin Films

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

Comparative study of ZnO thin films prepared by plasma deposition and electron beam evaporation for use in photovoltaic devices

2010 ◽  
Vol 19 (2) ◽  
pp. 149-154 ◽  
Author(s):  
V. D. Falcão ◽  
D. O. Miranda ◽  
M. E. L. Sabino ◽  
T. D. O. Moura ◽  
A. S. A. C Diniz ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Comparative Study ◽  
Plasma Deposition ◽  
Electron Beam Evaporation ◽  
Zno Thin Films ◽  
Photovoltaic Devices

Physical property exploration of highly oriented V2O5 thin films prepared by electron beam evaporation

2015 ◽  
Vol 39 (12) ◽  
pp. 9471-9479 ◽  
Author(s):  
Shrividhya Thiagarajan ◽  
Mahalingam Thaiyan ◽  
Ravi Ganesan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Single Phase ◽  
Physical Property ◽  
Electron Beam Evaporation ◽  
V2o5 Thin Films ◽  
Thin Film Nanostructures

Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.

Reducing Thermal Effect on Thermoelectric Thin Films Fabrication Using Mechanical Chopper Coupling with CO2 Laser Ablation

2013 ◽  
Vol 770 ◽  
pp. 358-361
Author(s):  
Rakdiaw Muangma ◽  
Voravit Kosalathip ◽  
Taswal Kumpeerapun ◽  
Pichet Limsuwan ◽  
Anne Dauscher
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Thermal Effect ◽  
Exposure Time ◽  
Average Power ◽  
Vacuum System ◽  
Thin Film Fabrication ◽  
Film Fabrication ◽  
Mechanical Chopper

The aim of this experiment was to use mechanical chopper coupling with CO2 laser ablation to reduce thermal effect on thermoelectric thin film fabrication. The average power at 10 W of sealed tube CO2 laser together with the mechanical chopper was used for the thermoelectric (TE) thin film fabrication on silicon substrate in vacuum system. The 1.02 ms of pulse duration with 600 Hz of repetition rate were generated by the optimized speed of chopper at 4500 rpm with 8 channels of circular apertures which were used for the reduction of thermal effect on the bismuth antimony telluride (Bi-Sb-Te) target. The experiment results illustrated the thickness and the thin films fabricated by using 10 seconds of exposure time with the chopper, illustrated the smaller grain size than without the chopper while the thickness increased as the exposure time increased at constant speed of chopper. The output efficiency referred to the ratio of the thickness per target lost in unit time which increased from 19.6 to 181.8 μm/g per hour, due to the increase of the exposure time with the chopper while without the chopper resulted in 55.0 μm/g per hour caused by the higher temperature raise on the thermoelectric target which affected to the as-deposited thin films and the re-evaporation occurred. In this experiment, the chopper speed was measured by the digital tachometer, the target loss was analyzed by the digital analytical balance and the morphology of the 600 tilted surface of thin film was characterized by scanning electron microscope (SEM).

scholarly journals Thin film fabrication and characterization of proton conducting lanthanum tungstate

2014 ◽  
Vol 2 (43) ◽  
pp. 18463-18471 ◽  
Author(s):  
Kristin Bergum ◽  
Anna Magrasó ◽  
Helmer Fjellvåg ◽  
Ola Nilsen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Impedance Spectroscopy ◽  
Atomic Layer ◽  
Proton Conducting ◽  
Thin Film Fabrication ◽  
Layer Deposition ◽  
Film Fabrication ◽  
Fabrication And Characterization

Thin films of the proton conducting lanthanum tungstate phase, La28−xW4+xO54+δv2−δ, were fabricated by atomic layer deposition (ALD) and characterized by impedance spectroscopy.

scholarly journals Processing Techniques with Heating Conditions for Multiferroic Systems of BiFeO3, BaTiO3, PbTiO3, CaTiO3 Thin Films

2021 ◽  
Author(s):  
Kuldeep Chand Verma ◽  
Manpreet Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Phenomenon ◽  
Synthesis Methods ◽  
Device Performance ◽  
Free Film ◽  
Thin Film Fabrication ◽  
Chip Size ◽  
Film Fabrication ◽  
Long Range Ordering

In this chapter, we have report a list of synthesis methods (including both synthesis steps & heating conditions) used for thin film fabrication of perovskite ABO3 (BiFeO3, BaTiO3, PbTiO3 and CaTiO3) based multiferroics (in both single-phase and composite materials). The processing of high quality multiferroic thin film have some features like epitaxial strain, physical phenomenon at atomic-level, interfacial coupling parameters to enhance device performance. Since these multiferroic thin films have ME properties such as electrical (dielectric, magnetoelectric coefficient & MC) and magnetic (ferromagnetic, magnetic susceptibility etc.) are heat sensitive, i.e. ME response at low as well as higher temperature might to enhance the device performance respect with long range ordering. The magnetoelectric coupling between ferromagnetism and ferroelectricity in multiferroic becomes suitable in the application of spintronics, memory and logic devices, and microelectronic memory or piezoelectric devices. In comparison with bulk multiferroic, the fabrication of multiferroic thin film with different structural geometries on substrate has reducible clamping effect. A brief procedure for multiferroic thin film fabrication in terms of their thermal conditions (temperature for film processing and annealing for crystallization) are described. Each synthesis methods have its own characteristic phenomenon in terms of film thickness, defects formation, crack free film, density, chip size, easier steps and availability etc. been described. A brief study towards phase structure and ME coupling for each multiferroic system of BiFeO3, BaTiO3, PbTiO3 and CaTiO3 is shown.

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