scholarly journals High-density VERPs show distinct mechanisms for global form and motion processing in adults and infants

2010 ◽  
Vol 7 (9) ◽  
pp. 772-772 ◽  
Author(s):  
O. Braddick ◽  
J. Wattam-Bell ◽  
D. Birtles ◽  
J. Atkinson ◽  
C. von Hofsten ◽  
...  
Keyword(s):  
High Density ◽  
Motion Processing ◽  
Global Form

scholarly journals High-density VEP measures of global form and motion processing in infants born very preterm

2010 ◽  
Vol 8 (6) ◽  
pp. 422-422
Author(s):  
A. Janette ◽  
B. Dee ◽  
A. Shirley ◽  
B. Oliver ◽  
R. Mary ◽  
...  
Keyword(s):  
High Density ◽  
Motion Processing ◽  
Very Preterm ◽  
Global Form

scholarly journals The neurophysiology of human biological motion processing: A high-density electrical mapping study

NeuroImage ◽  
2011 ◽  
Vol 56 (1) ◽  
pp. 373-383 ◽  
Author(s):  
Aaron I. Krakowski ◽  
Lars A. Ross ◽  
Adam C. Snyder ◽  
Pejman Sehatpour ◽  
Simon P. Kelly ◽  
...  
Keyword(s):  
Biological Motion ◽  
High Density ◽  
Motion Processing ◽  
Mapping Study ◽  
Electrical Mapping

scholarly journals Coherence dependence of high-density visual evoked potentials to global form and motion displays

2010 ◽  
Vol 8 (6) ◽  
pp. 17-17 ◽  
Author(s):  
J. Wattam-Bell ◽  
D. Birtles ◽  
W. Li ◽  
P.-Y. Lin ◽  
O. Braddick ◽  
...  
Keyword(s):  
Evoked Potentials ◽  
Visual Evoked Potentials ◽  
High Density ◽  
Global Form ◽  
Visual Evoked

scholarly journals Reorganization of Global Form and Motion Processing during Human Visual Development

2010 ◽  
Vol 20 (5) ◽  
pp. 411-415 ◽  
Author(s):  
John Wattam-Bell ◽  
Dee Birtles ◽  
Pär Nyström ◽  
Claes von Hofsten ◽  
Kerstin Rosander ◽  
...  
Keyword(s):  
Visual Development ◽  
Motion Processing ◽  
Global Form

scholarly journals Global form and motion processing in healthy ageing

2016 ◽  
Vol 166 ◽  
pp. 12-20 ◽  
Author(s):  
Hannah C. Agnew ◽  
Louise H. Phillips ◽  
Karin S. Pilz
Keyword(s):  
Healthy Ageing ◽  
Motion Processing ◽  
Global Form

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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