Fabrication of Silicon Nanowire Field-Effect Transistor Biosensor by CMOS Compatible Top-Down Approach with Descum Process

2009 ◽  
Vol 7 (6) ◽  
pp. 1039-1043 ◽  
Author(s):  
Young-Soo Sohn ◽  
Gil Bum Kang ◽  
Yong Tae Kim
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Top Down ◽  
Effect Transistor ◽  
Cmos Compatible

scholarly journals CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

Materials ◽  
2018 ◽  
Vol 11 (5) ◽  
pp. 785 ◽  
Author(s):  
Duy Tran ◽  
Thuy Pham ◽  
Bernhard Wolfrum ◽  
Andreas Offenhäusser ◽  
Benjamin Thierry
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Technology Development ◽  
Silicon Nanowire ◽  
Biosensor Technology ◽  
Effect Transistor ◽  
Cmos Compatible

Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer

Small ◽  
2012 ◽  
Vol 9 (4) ◽  
pp. 525-530 ◽  
Author(s):  
Xiao Yu ◽  
Yuchen Wang ◽  
Hong Zhou ◽  
Yanxiang Liu ◽  
Yi Wang ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Top Down ◽  
Effect Transistor

CMOS-compatible fabrication of top-gated field-effect transistor silicon nanowire-based biosensors

2011 ◽  
Vol 21 (6) ◽  
pp. 065008 ◽  
Author(s):  
Patrick Ginet ◽  
Sho Akiyama ◽  
Nobuyuki Takama ◽  
Hiroyuki Fujita ◽  
Beomjoon Kim
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor ◽  
Cmos Compatible

Poly-Silicon Nanowire FET Chemical Sensor

2010 ◽  
Author(s):  
Chih-ting Lin ◽  
Che-wei Huang ◽  
Jui-ching Wang
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Sensor ◽  
Silicon Nanowire ◽  
Standard Process ◽  
Dna Virus ◽  
Nano Technology ◽  
Effect Transistor ◽  
Cmos Compatible

Based on the improvements of the fabrication technologies, the dimension of the device has decreased to tens of nanometer. The nano-technology has become intriguing to integrate semiconductor technologies into bio-related applications. As the consequence, silicon nanowires (Si NWs) have been proposed to detect proteins, DNA, virus, and ions etc. However, few of previous studies consider the possibility to merge with CMOS standard process. In this work, we announced CMOS compatible technique which is used to develop polysilicon nanowire field effect transistor (poly-Si NW FET) as a chemical sensor to address this issue.

scholarly journals A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

2013 ◽  
Vol 4 ◽  
pp. 330-335 ◽  
Author(s):  
Denis E Presnov ◽  
Sergey V Amitonov ◽  
Pavel A Krutitskii ◽  
Valentina V Kolybasova ◽  
Igor A Devyatov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Ph Change ◽  
Maximum Charge ◽  
Effect Transistor ◽  
Cmos Compatible ◽  
On Chip ◽  
The One

Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode. Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.

scholarly journals Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

Nano Letters ◽  
2021 ◽  
Author(s):  
Xiwen Liu ◽  
Dixiong Wang ◽  
Kwan-Ho Kim ◽  
Keshava Katti ◽  
Jeffrey Zheng ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Scandium Nitride ◽  
Effect Transistor ◽  
Cmos Compatible

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate

ACS Sensors ◽  
2019 ◽  
Vol 4 (2) ◽  
pp. 427-433 ◽  
Author(s):  
Xi Chen ◽  
Si Chen ◽  
Qitao Hu ◽  
Shi-Li Zhang ◽  
Paul Solomon ◽  
...  
Keyword(s):  
Noise Reduction ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Schottky Junction ◽  
Effect Transistor ◽  
Device Noise
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