An Equivalent Circuit Model for Simulating the Separative Extended Gate Field Effect Transistor

2008 ◽  
Vol 6 (6) ◽  
pp. 924-928 ◽  
Author(s):  
Jung-Chuan Chou ◽  
Jyun-Ming Chen
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Effect Transistor

scholarly journals Design of carbon nanotube field effect transistor (CNTFET) small signal model

2020 ◽  
Vol 10 (1) ◽  
pp. 180
Author(s):  
Soheli Farhana
Keyword(s):  
Carbon Nanotube ◽  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Equivalent Circuit Model ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
S Parameters ◽  
Effect Transistor

<span lang="EN-US">The progress of Carbon Nanotube Field Effect Transistor (CNTFET) devices has facilitated the trimness of mobile phones, computers and all other electronic devices. CNTFET devices contribute to model these electronics instruments that require designing the devices. This research consists of the design and verification of the CNTFET device's small signal model. Scattering parameters (S-parameters) is extracted from the CNTFET model to construct equivalent small model circuit. Current sources, capacitors and resistors are involved to evaluate this equivalent circuit. S-parameters and small signal models are elaborated to analyze using a technique to form the small signal equivalent circuit model. In this design modeling process, at first intrinsic device's Y-parameters are determined. After that series of impedances are calculated. At last, Y-parameters model are transformed to add parasitic capacitances. The analysis result shows the acquiring high frequency performances are obtained from this equivalent circuit.</span>

Implementation of Membership Function using Spatial Wave-Function Switched FETs

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450007 ◽  
Author(s):  
Supriya Karmakar ◽  
John A Chandy ◽  
Faquir C. Jain
Keyword(s):  
Wave Function ◽  
Membership Function ◽  
Applied Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carrier Concentration ◽  
Circuit Model ◽  
Digital To Analog Converter ◽  
Effect Transistor ◽  
Spatial Wave Function

Spatial wave-function switched field effect transistor (SWSFET) switches the current flow between different channels inside the FET based on the applied voltage in its gate terminal. SWSFET can be used to implement multi-valued logic circuit with less number of circuit elements. Recently we presented unipolar inverter circuit using SWSFET. In this paper we develop a circuit model of SWSFET based on BSIM 3.2.0 and BSIM 3.2.4 and implement membership function using that circuit model of SWSFET. The spatial wave-function switched field effect transistor (SWSFET) has two or three low band-gap quantum well channels inside the substrate of the semiconductor. Applied voltage at the gate region of the SWSFET, switches the charge carrier concentration in different channels from source to drain region. A circuit model of SWSFET is developed in BSIM 3.2.0. Membership function is implemented using the circuit model of the SWSFET. Membership function implementation using less number of SWSFET will reduce the device count in future analog-to-digital converter (ADC) and digital-to-analog converter (DAC) circuits.

Design and Simulation of Electrochemical Equivalent Circuit for Extended-gate FET pH Sensor Based on Experimental Value Using LTSPICE XVII

2021 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Zurita Zulkifli ◽  
Sukreen Hana Herman
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Spice Simulation ◽  
Discrete Component ◽  
Ph Values ◽  
Spice Model ◽  
Effect Transistor ◽  
Output Characteristics

Abstract A SPICE model for extended-gate field-effect transistor (EGFET) based pH sensor was developed using standard discrete components. Capacitors and resistors were used to represent the sensing and reference electrodes in the EGFET sensor system and the values of the discrete component were varied to see the output of the transistor. These variations were done to emulate the EGFET sensor output in different pH values. It was found that the experimental transfer and output characteristics of the EGFET were very similar to those from the SPICE simulation. Other than that, the changes of value components in the equivalent circuit did not affect the transfer and output characteristics graph, but the capacitor value produced significant output variation in the simulation. This can be related to the modification on the equivalent circuit was done with additional voltage, VSB (source to bulk) to produce the different VT values at different pH.

RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit

2006 ◽  
Vol 45 (4B) ◽  
pp. 3609-3613 ◽  
Author(s):  
Haitao Ye ◽  
Makoto Kasu ◽  
Kenji Ueda ◽  
Yoshiharu Yamauchi ◽  
Narihiko Maeda ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Elevated Temperatures ◽  
Effect Transistor ◽  
Rf Performance
Sign in / Sign up

Export Citation Format

Share Document