Room-Temperature Infrared Radiation Detection Using n-Type PtSi/Porous Si

2007 ◽  
Vol 5 (2) ◽  
pp. 392-394 ◽  
Author(s):  
Farshid Raissi ◽  
Alireza Erfanian ◽  
Sattar Mirzakuchaki
Keyword(s):  
Infrared Radiation ◽  
Room Temperature ◽  
Radiation Detection ◽  
Porous Si

Infrared radiation detection by a piezoelectric heterostructure at room temperature

2012 ◽  
Vol 9 (8-9) ◽  
pp. 1793-1796 ◽  
Author(s):  
T. Kryshtab ◽  
R. Savkina ◽  
F. Sizov ◽  
A. Smirnov ◽  
M. Kladkevich ◽  
...  
Keyword(s):  
Infrared Radiation ◽  
Room Temperature ◽  
Radiation Detection

scholarly journals High-Pressure Spectroscopy Study of Zn(IO3)2 Using Far-Infrared Synchrotron Radiation

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 34
Author(s):  
Akun Liang ◽  
Robin Turnbull ◽  
Enrico Bandiello ◽  
Ibraheem Yousef ◽  
Catalin Popescu ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transitions ◽  
Synchrotron Radiation ◽  
Infrared Radiation ◽  
Room Temperature ◽  
Far Infrared ◽  
Low Pressure ◽  
Pressure Response ◽  
Spectroscopy Study ◽  
Far Infrared Radiation

We report the first high-pressure spectroscopy study on Zn(IO3)2 using synchrotron far-infrared radiation. Spectroscopy was conducted up to pressures of 17 GPa at room temperature. Twenty-five phonons were identified below 600 cm−1 for the initial monoclinic low-pressure polymorph of Zn(IO3)2. The pressure response of the modes with wavenumbers above 150 cm−1 has been characterized, with modes exhibiting non-linear responses and frequency discontinuities that have been proposed to be related to the existence of phase transitions. Analysis of the high-pressure spectra acquired on compression indicates that Zn(IO3)2 undergoes subtle phase transitions around 3 and 8 GPa, followed by a more drastic transition around 13 GPa.

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

Evaluation of Electrical Contact Material Stability on Mercuric Iodide

1993 ◽  
Vol 302 ◽  
Author(s):  
A. Y. Cheng
Keyword(s):  
Free Energy ◽  
Room Temperature ◽  
Electrical Contact ◽  
Radiation Detection ◽  
Electrical Contacts ◽  
Contact Material ◽  
Mercuric Iodide ◽  
Energy Data ◽  
Contact Materials ◽  
Temperature Radiation

ABSTRACTMercuric iodide detectors are leading candidates for room-temperature radiation detection applications. The inherently reactive nature of mercuric iodide limits the number of materials suitable for fabrication of electrical contacts. The theoretical stabilities of elemental contact materials on mercuric iodide were evaluated at 25°C. Additionally, the stabilities of transparent conductive compounds, for photodetector applications, were studied. Calculations were based on Gibbs free energy data, estimates and a series of hypothesized reactions with mercuric iodide. Leading candidate materials were identified and compared to experimental results.

scholarly journals Investigating Detectability of Infrared Radiation Based on Image Evaluation for Engine Flame

Entropy ◽  
2019 ◽  
Vol 21 (10) ◽  
pp. 946 ◽  
Author(s):  
Xia Li ◽  
Jun Wang ◽  
Meihui Li ◽  
Zhenming Peng ◽  
Xingrun Liu
Keyword(s):  
Infrared Radiation ◽  
Background Radiation ◽  
Evaluation Model ◽  
Radiation Detection ◽  
Infrared Image ◽  
Surface Radiation ◽  
Spectral Correlation ◽  
Jet Flame ◽  
Angle Of View ◽  
Application Requirements

Aiming at the application requirements of infrared detection, the influence of earth background interference on plume radiation detection is investigated and discussed in this article. The infrared image of the earth’s atmospheric background radiation is simulated by the spectral correlation based on the conversion model of the surface radiation with different bands. The infrared radiation image of the jet flame and the background is generated by overlapping the infrared radiation of the engine flame and the background radiation according to the detection angle of view. Through the image quality evaluation model, the detectability of the flame is analyzed. The simulating results show that the comprehensive statistical features such as image information entropy, variance and signal-to-clutter ratio can be used to evaluate the detectability of the engine flame.

Fast Photoluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
V. Petrova-Koch ◽  
T. Muschik ◽  
D. I. Kovalev ◽  
F. Koch ◽  
V. Lehmann
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Spectral Range ◽  
Luminescence Band ◽  
Room Temperature ◽  
Internal Surface ◽  
Porous Si ◽  
Time Resolved ◽  
Processed Material ◽  
Defect Luminescence

ABSTRACTTime-resolved studies of the visible photoluminescence in porous silicon with three different coverages of the internal surface are reported. We use aged, naturally oxidized porous Si (oxihydride), rapid thermal processed material (oxide) and samples stored in HF (pure hydride). A new, fast luminescence band in the blue-green spectral range and with response time less than 100 ns is observed at room temperature in each of the samples, although with different intensities. The observations prove that this is not an oxide-defect luminescence. We speculate on mechanisms for the origin of the fast luminescence in nanometer-size crystallites of Si.

scholarly journals Graphene-incorporated plasmo-thermomechanical infrared radiation detection

2020 ◽  
Vol 37 (3) ◽  
pp. 774
Author(s):  
Mohammad Wahiduzzaman Khan ◽  
Qiancheng Zhao ◽  
Parinaz Sadri-Moshkenani ◽  
Md Shafiqul Islam ◽  
Ozdal Boyraz
Keyword(s):  
Infrared Radiation ◽  
Radiation Detection

Purity analysis for room-temperature semiconductor radiation detection material, CsPbBr3, using ICP-MS

2020 ◽  
Vol 35 (11) ◽  
pp. 2672-2678
Author(s):  
Ulrich Makanda ◽  
Alexandre Voinot ◽  
Ramjee Kandel ◽  
Yu Wu ◽  
Matthew Leybourne ◽  
...  
Keyword(s):  
Room Temperature ◽  
Radiation Detector ◽  
Radiation Detection ◽  
Impurity Analysis ◽  
Icp Ms ◽  
Purity Analysis

An ICP-MS protocol has been adapted to the impurity analysis of potential radiation detector, CsPbBr3. The newly developed method was validated by conducting a series of spike-and-recovery experiments based on solution synthesized CsPbBr3.

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