Raman-Scattering Properties of Er-Doped Alkaline Tellurite Glasses for Lasing Applications

2020 ◽  
Vol 12 (6) ◽  
pp. 861-865
Author(s):  
Alya S. Al Shehri ◽  
El Sayed Yousef ◽  
A. E. Al-Salami
Keyword(s):  
Raman Scattering ◽  
Oscillator Strength ◽  
Excited States ◽  
Raman Spectra ◽  
Tellurite Glasses ◽  
Quality Factors ◽  
Melting Method ◽  
Er Doped

Alkaline tellurite glasses within composition of 65TeO2–9Nb2O5–5Li2O–15LiCl–5PbO–1.0La2O3 xEr2O3 ions doped (where x is 0, 20000, 25000 and 30000 ppm) have been prepared by the quenching melting method. Herein, parameters such as Judd–Ofelt, Ωt (t = 2, 4, 6) has been estimated. Transfer probabilities quality factors, magnetic and electric radiative oscillator strength fluorescence are used for a number of different excited states. Moreover, the structure of prepared glasses was investigated using Raman spectra. Physical and spectroscopic characterizations of Er3+ doped these glasses, which imply that we can fabricate them as potential candidates for optical application.

scholarly journals Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Osiekowicz ◽  
D. Staszczuk ◽  
K. Olkowska-Pucko ◽  
Ł. Kipczak ◽  
M. Grzeszczyk ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Effect ◽  
Band Gap ◽  
Raman Spectra ◽  
Quantum Interference ◽  
Optical Band Gap ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Electron Phonon Coupling ◽  
Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

Measurement of Atomic Oscillator Strength Distribution from the Excited States

2008 ◽  
Author(s):  
Shahid Hussain ◽  
M. Saleem ◽  
M. A. Baig ◽  
Marco Antonio Gigosos ◽  
Manuel Ángel González
Keyword(s):  
Oscillator Strength ◽  
Excited States ◽  
Strength Distribution

Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

1999 ◽  
Vol 595 ◽  
Author(s):  
U. Hömmerich ◽  
J. T. Seo ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
R. Birkhahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Excited States ◽  
Room Temperature ◽  
Molecular Beam ◽  
Average Lifetime ◽  
Green Luminescence ◽  
Si Substrates ◽  
Lifetime Analysis ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

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