Interdiffusion Phenomena and Magnetic Properties of Deposited Co/Cu/Co Trilayers on Silicon Wafers

2018 ◽  
Vol 10 (9) ◽  
pp. 1327-1331 ◽  
Author(s):  
X. W. Peng ◽  
L. Chen
Keyword(s):  
Magnetic Properties ◽  
Silicon Wafers ◽  
Interdiffusion Phenomena

AEM analysis of crystallization in Ti-based amorphous alloys

1983 ◽  
Vol 41 ◽  
pp. 270-271
Author(s):  
A.R. Pelton ◽  
A.F. Marshall ◽  
Y.S. Lee
Keyword(s):  
Magnetic Properties ◽  
Amorphous Alloys ◽  
Amorphous Materials ◽  
Isothermal Annealing ◽  
Amorphous Matrix ◽  
Nucleation And Growth ◽  
Current Interest ◽  
Amorphous Films ◽  
Electrical And Magnetic Properties

Amorphous materials are of current interest due to their desirable mechanical, electrical and magnetic properties. Furthermore, crystallizing amorphous alloys provides an avenue for discerning sequential and competitive phases thus allowing access to otherwise inaccessible crystalline structures. Previous studies have shown the benefits of using AEM to determine crystal structures and compositions of partially crystallized alloys. The present paper will discuss the AEM characterization of crystallized Cu-Ti and Ni-Ti amorphous films.Cu60Ti40: The amorphous alloy Cu60Ti40, when continuously heated, forms a simple intermediate, macrocrystalline phase which then transforms to the ordered, equilibrium Cu3Ti2 phase. However, contrary to what one would expect from kinetic considerations, isothermal annealing below the isochronal crystallization temperature results in direct nucleation and growth of Cu3Ti2 from the amorphous matrix.

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

Microstructure in soft magnetic E3 (S1, Al) (Sendust) alloys

1988 ◽  
Vol 46 ◽  
pp. 770-771
Author(s):  
June D. Kim
Keyword(s):  
Electron Microscopy ◽  
Magnetic Properties ◽  
Ternary Phase Diagram ◽  
Vertical Tube ◽  
Vacuum Induction Melting ◽  
Induction Melting ◽  
Soft Magnetic ◽  
Quenching Temperature ◽  
Thin Foils ◽  
Vertical Tube Furnace

Iron-base alloys containing 8-11 wt.% Si, 4-8 wt.% Al, known as “Sendust” alloys, show excellent soft magnetic properties. These magnetic properties are strongly dependent on heat treatment conditions, especially on the quenching temperature following annealing. But little has been known about the microstructure and the Fe-Si-Al ternary phase diagram has not been established. In the present investigation, transmission electron microscopy (TEM) has been used to study the microstructure in a Sendust alloy as a function of temperature.An Fe-9.34 wt.% Si-5.34 wt.% Al (approximately Fe3Si0.6Al0.4) alloy was prepared by vacuum induction melting, and homogenized at 1,200°C for 5 hrs. Specimens were heat-treated in a vertical tube furnace in air, and the temperature was controlled to an accuracy of ±2°C. Thin foils for TEM observation were prepared by jet polishing using a mixture of perchloric acid 15% and acetic acid 85% at 10V and ∼13°C. Electron microscopy was performed using a Philips EM 301 microscope.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Magnetic properties of new charge-transfer complexes based on manganese porphyrins

1997 ◽  
Vol 90 (3) ◽  
pp. 407-413
Author(s):  
MARC KELEMEN ◽  
CHRISTOPH WACHTER ◽  
HUBERT WINTER ◽  
ELMAR DORMANN ◽  
RUDOLF GOMPPER ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Charge Transfer ◽  
Charge Transfer Complexes ◽  
Manganese Porphyrins

Low temperature drive-in of surface-deposited copper in silicon wafers

2004 ◽  
Vol 27 (1-3) ◽  
pp. 435-438 ◽  
Author(s):  
M. L. Polignano ◽  
D. Caputo ◽  
C. Carpanese ◽  
G. Salvà ◽  
L. Vanzetti
Keyword(s):  
Low Temperature ◽  
Silicon Wafers
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