Quantum Dot LEDs Based on Solution-Processed Zinc Oxide Nano Particles as Electron Transport Layer

2016 ◽  
Vol 8 (2) ◽  
pp. 382-387 ◽  
Author(s):  
Yunsoon Ka ◽  
Hye-Ryun Jang ◽  
Woon-Seop Choi
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Nano Particles ◽  
Electron Transport Layer ◽  
Solution Processed

Highly stable and efficient inverted organic solar cells based on low-temperature solution-processed PEIE and ZnO bilayers

2016 ◽  
Vol 4 (10) ◽  
pp. 3784-3791 ◽  
Author(s):  
Won-Yong Jin ◽  
Riski Titian Ginting ◽  
Sung-Ho Jin ◽  
Jae-Wook Kang
Keyword(s):  
Zinc Oxide ◽  
Solar Cells ◽  
Electron Transport ◽  
Low Temperature ◽  
Active Layer ◽  
Organic Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Solution Processed ◽  
Temperature Solution

Highly efficient and air-stable inverted organic solar cells were fabricated from solution-processed non-conjugated polyethylenimine ethoxylated as the polyelectrolyte, a zinc oxide bilayer as the electron transport layer, and an active layer of PTB7 and PC71BM.

A highly efficient white quantum dot light-emitting diode employing magnesium doped zinc oxide as the electron transport layer based on bilayered quantum dot layers

2018 ◽  
Vol 6 (30) ◽  
pp. 8099-8104 ◽  
Author(s):  
Lixi Wang ◽  
Jiangyong Pan ◽  
Jianping Qian ◽  
Wei Lei ◽  
Yuanjun Wu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diode ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Driving Voltage ◽  
Light Emitting ◽  
White Emission ◽  
Highly Efficient

A highly efficient QLED achieving white emission at a low driving voltage is obtained by employing Zn0.95Mg0.05O as the electron transport layer.

scholarly journals Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1246
Author(s):  
Binbin Zhang ◽  
Yu Luo ◽  
Chaohuang Mai ◽  
Lan Mu ◽  
Miaozi Li ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Root Mean Square Roughness ◽  
Zno Film ◽  
Light Emitting ◽  
Mg Doping ◽  
Mg Doped

An environment-friendly inverted indium phosphide red quantum dot light-emitting diode (InP QLED) was fabricated using Mg-doped zinc oxide (ZnMgO) as the electron transport layer (ETL). The effects of ZnMgO ETL on the performance of InP QLED were investigated. X-ray diffraction (XRD) analysis indicated that ZnMgO film has an amorphous structure, which is similar to zinc oxide (ZnO) film. Comparison of morphology between ZnO film and ZnMgO film demonstrated that Mg-doped ZnO film remains a high-quality surface (root mean square roughness: 0.86 nm) as smooth as ZnO film. The optical band gap and ultraviolet photoelectron spectroscopy (UPS) analysis revealed that the conduction band of ZnO shifts to a more matched position with InP quantum dot after Mg-doping, resulting in the decrease in turn-on voltage from 2.51 to 2.32 V. In addition, the ratio of irradiation recombination of QLED increases from 7% to 25% using ZnMgO ETL, which can be attributed to reduction in trap state by introducing Mg ions into ZnO lattices. As a result, ZnMgO is a promising material to enhance the performance of inverted InP QLED. This work suggests that ZnMgO has the potential to improve the performance of QLED, which consists of the ITO/ETL/InP QDs/TCTA/MoO3/Al, and Mg-doping strategy is an efficient route to directionally regulate ZnO conduction bands.

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