Temperature-Dependent Electrical Properties of Sn-Doped ZnO Nanowires

2015 ◽  
Vol 7 (12) ◽  
pp. 2684-2691 ◽  
Author(s):  
S. Al-Heniti ◽  
R. I. Badran ◽  
Ahmad Umar
Keyword(s):  
Electrical Properties ◽  
Zno Nanowires ◽  
Temperature Dependent ◽  
Doped Zno

Optical and electrical properties of p-type Li-doped ZnO nanowires

2013 ◽  
Vol 61 ◽  
pp. 91-96 ◽  
Author(s):  
Abdolhossein Sáaedi ◽  
Ramin Yousefi ◽  
Farid Jamali-Sheini ◽  
Mohsen Cheraghizade ◽  
A. Khorsand Zak ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Zno Nanowires ◽  
Optical And Electrical Properties ◽  
Doped Zno ◽  
P Type

Electrical properties of lightly Ga-doped ZnO nanowires

2017 ◽  
Vol 32 (12) ◽  
pp. 125010 ◽  
Author(s):  
S Alagha ◽  
S Heedt ◽  
D Vakulov ◽  
F Mohammadbeigi ◽  
E Senthil Kumar ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Zno Nanowires ◽  
Doped Zno

scholarly journals Electrical properties and near band edge emission of Bi-doped ZnO nanowires

2007 ◽  
Vol 90 (8) ◽  
pp. 083113 ◽  
Author(s):  
Congkang Xu ◽  
Junghwan Chun ◽  
Dong Eon Kim ◽  
Ju-Jin Kim ◽  
Bonghwan Chon ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Zno Nanowires ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Doped Zno

Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment

2018 ◽  
Vol 99 ◽  
pp. 254-260 ◽  
Author(s):  
Ying Wang ◽  
Yicong Chen ◽  
Xiaomeng Song ◽  
Zhipeng Zhang ◽  
Juncong She ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Zno Nanowires ◽  
Doped Zno

scholarly journals Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application

2020 ◽  
Vol 10 (1) ◽  
pp. 21-28
Author(s):  
Yas Al-Hadeethi ◽  
Rashad I. Badran ◽  
Ahmad Umar ◽  
Saleh. H. Al-Heniti ◽  
Bahaaudin M. Raffah ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Morphological Characteristics ◽  
Zno Nanowires ◽  
Heterojunction Diode ◽  
Si Substrate ◽  
Voltage Range ◽  
Doped Zno ◽  
Electrical Characterizations ◽  
Excellent Stability

In this paper, the heterojunction diode based on n-Ga doped ZnO nanowires interconnected with disks/p-Si assembly was fabricated and their low-temperature electrical properties were examined. The Ga-doped ZnO nanowires interconnected with disks were grown over p-Si substrate and studied by numerous techniques to understand the structural, compositional and morphological characteristics. Electrical properties, at lowtemperatures ranging from 77 K–295 K, were examined for the fabricated heterojunction diode assembly both in reverse and forward biased conditions which exhibited an excellent stability over all the temperature range. The detailed electrical characterizations revealed that the current decreases gradually from 1.9 μA, to 0.87 μA to 0.84 μA when temperature increases from 77 K, 100 K to 150 K and then increases gradually from 1.86 μA–3.36 μA and to 9.95 μA when temperature increases from 200 K–250 K and to 295 K, respectively. Both the highest rectifying ratio at 100 K and the lowest one at 295 K occur in the voltage range of 2–5 V.

Sign in / Sign up

Export Citation Format

Share Document