Kinetics of the Ni/Ta-Interlayer/Ge Reactions Studied by In Situ Transmission Electron Microscopy

2015 ◽  
Vol 7 (8) ◽  
pp. 1497-1501 ◽  
Author(s):  
Jae-Wook Lee ◽  
Jee-Hwan Bae ◽  
Tae-Hoon Kim ◽  
Hyoungsub Kim ◽  
Seok-Hong Min ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Kinetics Of

Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy

Micron ◽  
1999 ◽  
Vol 30 (1) ◽  
pp. 21-32 ◽  
Author(s):  
F.M. Ross ◽  
P.A. Bennett ◽  
R.M. Tromp ◽  
J. Tersoff ◽  
M. Reuter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Kinetics ◽  
Transmission Electron ◽  
Kinetics Of

In-Situ Transmission Electron Microscopy and Computer Simulation Study of the Kinetics of Oxygen Loss in Yba2Cu3OZ

1989 ◽  
Vol 169 ◽  
Author(s):  
C. P. Burmester ◽  
L. T. Wille ◽  
R. Gronsky ◽  
B. T. Ahn ◽  
V. Y. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulation Study ◽  
Oxygen Loss ◽  
Domain Structures ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Image Simulations

AbstractHigh resolution transmission electron microscopy during in‐situ quenching of YBa2Cu3Oz is used to study the kinetics of microdomain formation during oxygen loss in this system. Image simulations based on atomic models of oxygen‐vacancy order in the basal plane of this material generated by Monte Carlo calculations are used to interpret high resolution micrographs of the structures obtained by quenching. The observed domain structures agree well with those obtained from the simualtions.

Analysis of Interface Dynamics in Solid-State Phase Transformations by In Situ Hot-Stage High-Resolution Transmission Electron Microscopy

1994 ◽  
Vol 332 ◽  
Author(s):  
James M. Howe ◽  
W. E. Benson ◽  
A. Garg ◽  
Y.-C. Chang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
High Resolution ◽  
Phase Transformations ◽  
Interface Motion ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Dynamics Of Interfaces

ABSTRACTIn situ hot-stage high-resolution transmission electron microscopy (HRTEM) provides unique capabilities for quantifying the dynamics of interfaces at the atomic level. Such information is critical for understanding the theory of interfaces and solid-state phase transformations. This paper provides a brief description of particular requirements for performing in situ hot-stage HRTEM, summarizes different types of in situ HRTEM investigations and illustrates the use of this technique to obtain quantitative data on the atomic mechanisms and kinetics of interface motion in precipitation, crystallization and martensitic reactions. Some limitations of in situ hot-stage HRTEM and future prospects of this technique are also discussed.

Nucleation and Growth kinetics of Cu2O During Reduction of CuO Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Jian Li ◽  
K. N. Tu ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Boundary ◽  
Activation Enthalpy ◽  
Nucleation And Growth ◽  
Classical Analysis ◽  
Transmission Electron ◽  
Kinetics Of ◽  
O Phase

AbstractThe combination of 16O(α, α)16O oxygen resonance measurement and transmission electron microscopy (TEM) provides an unique and effective method to study the kinetics of nucleation and growth of Cu2O phase during reduction. In situ TEM observation showed that isolated and large Cu2O grains emerge from the small CuO grain matrix and the growth of Cu2O grains is linear with time. We propose that the discontinuous morphology of grain growth of Cu2O is due to the migration of the Cu2O-CuO phase boundary induced by oxygen out-diffusion along the moving phase boundary. Based on the classical analysis of phase transformation by Johnson, Mehl and Avrami, the activation enthalpy of nucleation of Cu2O phase in the CuO matrix has been deduced as ΔEn=2.3 eV. The specific interfacial energy between CuO and Cu2O phases has been estimated as 0.5 eV/atom.

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