One-Step Synthesis, Structural and Optical Characterization of Self-Assembled ZnO Nanoparticle Clusters with Quench-Induced Defects

2014 ◽  
Vol 6 (6) ◽  
pp. 1160-1169 ◽  
Author(s):  
Bharati Debnath ◽  
Ganga Halder ◽  
Sayan Bhattacharyya
2018 ◽  
Vol 26 (8) ◽  
pp. 9614 ◽  
Author(s):  
Jake Fontana ◽  
Melissa Maldonado ◽  
Nicholas Charipar ◽  
Scott A. Trammell ◽  
Rafaela Nita ◽  
...  

2016 ◽  
Vol 24 (24) ◽  
pp. 27360 ◽  
Author(s):  
Jake Fontana ◽  
Melissa Maldonado ◽  
Nicholas Charipar ◽  
Scott A. Trammell ◽  
Rafaela Nita ◽  
...  

2004 ◽  
Vol 817 ◽  
Author(s):  
J. Li ◽  
P. J. Neyman ◽  
M. Vercellino ◽  
J. R. Heflin ◽  
R. Duncan ◽  
...  

AbstractPhotonic crystals (PC) offer novel approaches for integrated photonics by allowing the manipulation of light based on the photonic bandgap effect rather than internal-reflection mechanisms employed in traditional devices. Electro-optic polymers represent interesting possibilities for the development of devices leveraging control over the phase of a confined propagating wave. We here report on the development of such active photonic crystal technology in ionically self-assembled monolayers. The simulation of active photonic devices such as Mach-Zehnder interferometers and wavelength multiplexers is first presented. We then report on the synthesis and optical characterization of electro-optic films grown through the ISAM technique. We conclude by presenting the preliminary development of a nanofabrication platform that would enable the realization of active photonic devices in such materials.


1993 ◽  
Vol 318 ◽  
Author(s):  
K. Pieger ◽  
J. Straka ◽  
Ch. Gréus ◽  
A. Forchel

ABSTRACTWe have prepared buried InGaAs/GaAs wires by high resolution electron beam lithography, wet chemical etching and subsequent MBE overgrowth. Wires with lateral widths of less than 40nm have been realized.For optimized regrowth conditions such as growth temperature, growth rate, III/V ratio, and arsenic flux a smooth surface morphology of the 100nm thick overgrown (Al)GaAs layer is obtained.Etched only ultra narrow wires show a decrease of radiative recombination due to process induced defects and surface recombination at the open sidewalls. Optical investigations of narrow overgrown wires show a significant enhancement (up to two orders of magnitude) of the photoluminescence intensity. This is due to the disappearance of the open sidewalls and carrier capture from the overgrown barrier.From studies of the influence of the crystallographic orientation on the quantum efficiency we find, that <111>B surfaces of the <011> wires offer the best conditions for MBE overgrowth.


1997 ◽  
Vol 28 (8-10) ◽  
pp. 933-938 ◽  
Author(s):  
M. Henini ◽  
S. Sanguinetti ◽  
L. Brusaferri ◽  
E. Grilli ◽  
M. Guzzi ◽  
...  

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