Doping Effects on the Thermoelectric Properties of Cu3SbSe4

2011 ◽  
Vol 3 (4) ◽  
pp. 602-606 ◽  
Author(s):  
Eric J. Skoug ◽  
Jeffrey D. Cain ◽  
Paul Majsztrik ◽  
Melanie Kirkham ◽  
Edgar Lara-Curzio ◽  
...  
2017 ◽  
Vol 695 ◽  
pp. 1631-1636 ◽  
Author(s):  
Yue Xing Chen ◽  
Akio Yamamoto ◽  
Tsunehiro Takeuchi

2016 ◽  
Vol 49 (28) ◽  
pp. 285104 ◽  
Author(s):  
Chhatrasal Gayner ◽  
Raghunandan Sharma ◽  
Iram Mallik ◽  
Malay K Das ◽  
Kamal K Kar

2015 ◽  
Vol 15 (3) ◽  
pp. 190-193 ◽  
Author(s):  
Kyu Hyoung Lee ◽  
Soon-Mok Choi ◽  
Sang Il Kim ◽  
Jong Wook Roh ◽  
Dae Jin Yang ◽  
...  

2010 ◽  
Vol 57 (4) ◽  
pp. 247-251
Author(s):  
Tao Jiang ◽  
Takashi Sakai ◽  
Tomonori Fukuoka ◽  
Masaaki Miyamoto

2008 ◽  
Vol 55-57 ◽  
pp. 829-832
Author(s):  
Soon Chul Ur ◽  
Il Ho Kim

Te-doped CoSb3 was prepared by the encapsulated induction melting, and its doping effects on the thermoelectric properties were investigated. Single phase d-CoSb3 was successfully obtained by the subsequent annealing at 773K for 24 hours. Tellurium atoms acted as electron donors by substituting antimony atoms. Thermoelectric properties were remarkably improved by the appropriate doping. Dimensionless figure of merit was obtained to be 0.83 at 700K for the CoSb2.8Te0.2 specimen.


2009 ◽  
Vol 38 (7) ◽  
pp. 1504-1509 ◽  
Author(s):  
V. Jovovic ◽  
J. P. Heremans

2017 ◽  
Vol 46 (35) ◽  
pp. 11840-11850 ◽  
Author(s):  
Woongjin Choi ◽  
Junsu Lee ◽  
Yunho Lee ◽  
Kyunghan Ahn ◽  
Tae-Soo You

Eu10.74(2)K0.26Bi9.14(2)Sn0.86is the first example of having both cationic and anionic p-dopants in a single compound.


2002 ◽  
Vol 66 (7) ◽  
pp. 767-771 ◽  
Author(s):  
Hitoshi Matsuura ◽  
Yoichi Nishino ◽  
Uichiro Mizutani ◽  
Shigeru Asano

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