Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy

2016 ◽  
Vol 6 (4) ◽  
pp. 367-370 ◽  
Author(s):  
Xue-Hua Liu ◽  
Ji-Cai Zhang ◽  
Jun Huang ◽  
Ming-Ming Yang ◽  
Xu-Jun Su ◽  
...  
Keyword(s):  
Stress Distribution ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Intrinsic Stress

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
R. Zhang ◽  
L. Zhang ◽  
D.M. Hansen ◽  
Marek P. Boleslawski ◽  
K.L. Chen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Environment ◽  
Gallium Chloride ◽  
Lateral Overgrowth ◽  
Lateral Growth Rate

AbstractEpitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO structures with a planar surface to the GaN prisms. High-quality coalesced and planar ELO GaN has been fabricated by both growth chemistries. The use of the diethyl gallium chloride source allows for the benefits of HVPE growth to be realized within the MOVPE growth environment.

Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy

2007 ◽  
Vol 90 (12) ◽  
pp. 122116 ◽  
Author(s):  
Derrick S. Kamber ◽  
Yuan Wu ◽  
Edward Letts ◽  
Steven P. DenBaars ◽  
James S. Speck ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Epitaxial Overgrowth

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

2003 ◽  
Vol 764 ◽  
Author(s):  
Hai-Ping Liu ◽  
In-Gann Chen ◽  
Jenq-Dar Tsay ◽  
Wen-Yueh Liu ◽  
Yih-Der Guo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
High Index ◽  
Hydride Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gan Crystal

AbstractThe low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [1101] direction increases as growth temperature decreases. At low temperature of ∼ 850°C, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {1101} facet. Therefore, the formation of high index planes such as {2122} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.

Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy

2011 ◽  
Vol 8 (5) ◽  
pp. 1463-1466 ◽  
Author(s):  
Benjamin N. Bryant ◽  
Derrick S. Kamber ◽  
Feng Wu ◽  
Shuji Nakamura ◽  
James S. Speck
Keyword(s):  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

scholarly journals Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 465-470
Author(s):  
R. Zhang ◽  
L. Zhang ◽  
D.M. Hansen ◽  
Marek P. Boleslawski ◽  
K.L. Chen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Environment ◽  
Gallium Chloride ◽  
Lateral Overgrowth ◽  
Lateral Growth Rate

Epitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO structures with a planar surface to the GaN prisms. High-quality coalesced and planar ELO GaN has been fabricated by both growth chemistries. The use of the diethyl gallium chloride source allows for the benefits of HVPE growth to be realized within the MOVPE growth environment.

The effects of growth temperature on the crystallinity of GaN in gallium hydride vapor phase epitaxy method

2008 ◽  
Vol 5 (6) ◽  
pp. 1606-1608
Author(s):  
Norihide Yamada ◽  
Mamoru Imade ◽  
Yoshihiro Kitano ◽  
Fumio Kawamura ◽  
Masashi Yoshimura ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Gallium Hydride

Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

2013 ◽  
Vol 10 (3) ◽  
pp. 362-365 ◽  
Author(s):  
N. Coudurier ◽  
R. Boichot ◽  
V. Fellmann ◽  
A. Claudel ◽  
E. Blanquet ◽  
...  
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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