Equivalent Circuit Modeling of Quantum Dot Vertical Cavity Semiconductor Optical Amplifier Considering Different Pumping Conditions

2017 ◽  
Vol 12 (10) ◽  
pp. 1062-1071
Author(s):  
Dariush Razmjooei ◽  
Abbas Zarifkar
Keyword(s):  
Quantum Dot ◽  
Equivalent Circuit ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Vertical Cavity

Circuit modeling of quantum dot semiconductor optical amplifier

2010 ◽  
Vol 3 (3) ◽  
pp. 232-240 ◽  
Author(s):  
Yi Yu ◽  
Lirong Huang ◽  
Meng Xiong ◽  
Dexiu Huang
Keyword(s):  
Quantum Dot ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Circuit Modeling

Analysis of Quantum Dot Vertical Cavity Semiconductor Optical Amplifier with Saturable Absorber

2016 ◽  
Vol 850 ◽  
pp. 100-104
Author(s):  
Omar Qasaimeh
Keyword(s):  
Quantum Dot ◽  
Absorption Coefficient ◽  
Saturable Absorber ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Input Output ◽  
Trigger Level ◽  
Hysteresis Width ◽  
Vertical Cavity

We analyze the bistable characteristics of quantum dot vertical cavity semiconductor optical amplifier integrated with saturable absorber. The device demonstrates bistable characteristics in the input-output powers which can be controlled by changing the voltage of the saturable absorber. We observe that the lower trigger level is more sensitive to variation of the absorption coefficient of the saturable absorber than that of upper trigger level. For clockwise and butterfly loops, we find that the upper and lower trigger levels increase as the absorption coefficient increases, and consequently the hysteresis width decreases. For counter clockwise, the upper and lower trigger levels decrease as the absorption coefficient increases and the corresponding hysteresis width increases.

scholarly journals Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud
Keyword(s):  
Equivalent Circuit ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Dual Gate ◽  
Source Voltage ◽  
Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

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