Effect of Zinc Precursors on Solution-Processed Zinc-Tin Oxide Thin-Film Transistors

Yong Gu Lee; Woon-Seop Choi

doi:10.1166/jno.2016.1853

Effect of Zinc Precursors on Solution-Processed Zinc-Tin Oxide Thin-Film Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2016.1853 ◽

2016 ◽

Vol 11 (2) ◽

pp. 129-134 ◽

Cited By ~ 2

Author(s):

Yong Gu Lee ◽

Woon-Seop Choi

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Zinc Tin Oxide

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Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect

ECS Transactions ◽

10.1149/1.3481250 ◽

2019 ◽

Vol 33 (5) ◽

pp. 295-299 ◽

Cited By ~ 1

Author(s):

Bong-Jin Kim ◽

Hyung-Jun Kim ◽

Sung Mok Jung ◽

Tae-Sik Yoon ◽

Yong-Sang Kim ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Oxide Thin Film ◽

Solution Processed ◽

Nitrogen Effect ◽

Zinc Tin Oxide

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P‐23: Enhancement in the Mobility and the Stability of Solution‐Processed Zinc‐Tin Oxide Thin‐Film Transistors Using Alkali Metal Superoxide

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.13172 ◽

2019 ◽

Vol 50 (1) ◽

pp. 1298-1301

Author(s):

Tae Soo Jung ◽

Heesoo Lee ◽

Hee Jun Kim ◽

Jin Hyeok Lee ◽

Won Kyung Min ◽

...

Keyword(s):

Thin Film ◽

Alkali Metal ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Stability Of Solution ◽

Zinc Tin Oxide ◽

The Stability

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Improvement in performance of solution processed indium-zinc-tin oxide thin film transistors by using UV Ozone treatment on zirconium oxide gate insulator

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.1109/am-fpd.2015.7173189 ◽

2015 ◽

Author(s):

Ravindra Naik Bukke ◽

Christophe Avis ◽

Taehun Kim ◽

Jin Jang

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Zirconium Oxide ◽

Thin Film Transistors ◽

Gate Insulator ◽

Oxide Thin Film ◽

Ozone Treatment ◽

Solution Processed ◽

Zinc Tin Oxide ◽

Uv Ozone

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Fabrication of solution-processed nitrogen-doped niobium zinc tin oxide thin film transistors using ethanolamine additives

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.09.151 ◽

2017 ◽

Vol 729 ◽

pp. 370-378 ◽

Cited By ~ 2

Author(s):

Jiann-Shing Jeng ◽

Chi-Min Wu

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Nitrogen Doped ◽

Zinc Tin Oxide

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Enhanced mobility of solution-processed polycrystalline zinc tin oxide thin-film transistors via direct incorporation of water into precursor solution

Applied Physics Letters ◽

10.1063/1.4896265 ◽

2014 ◽

Vol 105 (12) ◽

pp. 122105 ◽

Cited By ~ 12

Author(s):

Genmao Huang ◽

Lian Duan ◽

Yunlong Zhao ◽

Guifang Dong ◽

Deqiang Zhang ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Precursor Solution ◽

Oxide Thin Film ◽

Solution Processed ◽

Polycrystalline Zinc ◽

Zinc Tin Oxide ◽

Enhanced Mobility ◽

Direct Incorporation

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Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.061101 ◽

2012 ◽

Vol 51 (6R) ◽

pp. 061101 ◽

Cited By ~ 6

Author(s):

Jeong-Soo Lee ◽

Yong-Jin Kim ◽

Yong-Uk Lee ◽

Yong-Hoon Kim ◽

Jang-Yeon Kwon ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Annealing Temperature ◽

Oxide Thin Film ◽

Electrical Characteristics ◽

Solution Processed ◽

Zinc Tin Oxide

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Low-Temperature, Solution-Processed Zinc Tin Oxide Thin-Film Transistors Fabricated by Thermal Annealing and Microwave Irradiation

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.040201 ◽

2012 ◽

Vol 51 (4R) ◽

pp. 040201 ◽

Cited By ~ 12

Author(s):

Young Bum Yoo ◽

Jee Ho Park ◽

Se Jong Lee ◽

Kie Moon Song ◽

Hong Koo Baik

Keyword(s):

Thin Film ◽

Low Temperature ◽

Microwave Irradiation ◽

Thermal Annealing ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Zinc Tin Oxide ◽

Temperature Solution

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Combined effect of the large ionic radius and low electronegativity of lanthanum additive on solution-processed zinc–tin–oxide thin-film transistors

Thin Solid Films ◽

10.1016/j.tsf.2013.04.018 ◽

2013 ◽

Vol 536 ◽

pp. 291-294 ◽

Cited By ~ 8

Author(s):

Chul Ho Kim ◽

You Seung Rim ◽

Dong Lim Kim ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Ionic Radius ◽

Combined Effect ◽

Oxide Thin Film ◽

Solution Processed ◽

Large Ionic Radius ◽

Zinc Tin Oxide

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Enhanced Bias Stability of Solution-Processed Zinc-Tin-Oxide Thin Film Transistors Using Self-Assembled Monolayer as a Selective Channel Passivation

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7799 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7056-7058

Author(s):

Jae-Sang Heo ◽

Sung-Kyu Park

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Self Assembled Monolayer ◽

Solution Processed ◽

Stability Of Solution ◽

Bias Stability ◽

Zinc Tin Oxide ◽

Selective Channel

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Low-temperature aqueous solution processed fluorine-doped zinc tin oxide thin-film transistors

MRS Communications ◽

10.1557/mrc.2012.1 ◽

2012 ◽

Vol 2 (1) ◽

pp. 17-22 ◽

Cited By ~ 11

Author(s):

Jun-Hyuck Jeon ◽

Young Hwan Hwang ◽

JungHo Jin ◽

Byeong-Soo Bae

Keyword(s):

Thin Film ◽

Aqueous Solution ◽

Low Temperature ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Zinc Tin Oxide ◽

Image Position

Abstract

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