An In-Situ Prepared Nano-Manipulator Tip for Electrical Characterization of Free Standing Graphene Like Sheets Inside a Focused Ion Beam/Scanning Electron Microscope

2011 ◽  
Vol 6 (2) ◽  
pp. 162-168
Author(s):  
T. Blom ◽  
S. H. M. Jafri ◽  
E. Widenkvist ◽  
U. Jansson ◽  
H. Grennberg ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Free Standing ◽  
Beam Scanning ◽  
Scanning Electron

In-situ integrity control of frozen-hydrated, vitreous lamellas prepared by the cryo-focused ion beam-scanning electron microscope

2013 ◽  
Vol 183 (1) ◽  
pp. 11-18 ◽  
Author(s):  
D.A. Matthijs de Winter ◽  
Rob J. Mesman ◽  
Michael F. Hayles ◽  
Chris T.W.M. Schneijdenberg ◽  
Cliff Mathisen ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Scanning ◽  
Scanning Electron

Development of Hybrid MEMS/FIB Processes and Applications of Three-pronged Active Nanotweezers For Manipulation of Nano Objects

2006 ◽  
Vol 983 ◽  
Author(s):  
Xuefeng Wang ◽  
Chang Liu
Keyword(s):  
Carbon Nanotubes ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
In Situ Characterization ◽  
End Effectors ◽  
Scanning Electron

AbstractWe report recent development of a three-probe micromachined nanomanipulator for manipulation and in-situ characterization of nanomaterials in scanning electron microscope (SEM). The nanomanipulator consists of three independent probes having thermal bimetallic actuators and nanoscopic end-effectors. Nanoscale end-effectors with sub-100-nm spacing are created using focused ion beam (FIB) milling to directly interface with nanoscopic objects (e.g., nanotubes, nanowires). Handling of individual carbon nanotubes (CNTs) was successfully realized with the nanomanipulator in an SEM.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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