DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure

2019 ◽  
Vol 19 (4) ◽  
pp. 2319-2322 ◽  
Author(s):  
Hyeon-Tak Kwak ◽  
Kyu-Won Jang ◽  
Hyun-Jung Kim ◽  
Sang-Heung Lee ◽  
Jong-Won Lim ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Bottom Plate ◽  
High Electron ◽  
High Electron Mobility ◽  
Plate Structure ◽  
Field Plate ◽  
Dc Characteristics

scholarly journals Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

2018 ◽  
Vol 8 (6) ◽  
pp. 974 ◽  
Author(s):  
Hyeon-Tak Kwak ◽  
Seung-Bo Chang ◽  
Hyun-Jung Kim ◽  
Kyu-Won Jang ◽  
Hyung Yoon ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Plate Structure ◽  
Field Plate ◽  
Operational Improvement

Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate

2011 ◽  
Vol 694 ◽  
pp. 891-895
Author(s):  
Chien Chang Huang ◽  
Chun Chia Chen ◽  
Jian Kai Liou ◽  
Po Cheng Chou ◽  
Huey Ing Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Thermal Evaporation ◽  
Low Cost ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Electron Microscopic ◽  
High Electron Mobility ◽  
Dc Characteristics ◽  
Scanning Electron Microscopic ◽  
Easy Operation

An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low-temperature and low-energy deposition conditions, the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states. The material analyses of EP approach, including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM), are examined. The DC performance of EP-gate device is investigated. In addition, the temperature influences of the studied devices, at the temperature region of 300 to 500K, are studied. As compared with the conventional thermal evaporation (TE) approach, the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K). Moreover, the EP approach also has advantages of easy operation and low cost.

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

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