Ar Plasma Treatment for III–V Semiconductor-Based Transistor Source/Drain Contact Resistance Reduction

2016 ◽  
Vol 16 (10) ◽  
pp. 10389-10392 ◽  
Author(s):  
Seung-Hwan Kim ◽  
Sun-Woo Kim ◽  
Gwang-Sik Kim ◽  
Jinok Kim ◽  
Jin-Hong Park ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Plasma Treatment ◽  
Resistance Reduction ◽  
Ar Plasma

Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment

2016 ◽  
Author(s):  
Yen-Teng Ho ◽  
Yung-Ching Chu ◽  
Chao An Jong ◽  
Hung-Yi Chen ◽  
Meng-Wei Lin ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Resistance Reduction ◽  
Ar Plasma ◽  
Pre Treatment ◽  
Layered Mos2

scholarly journals Enhancement of Output Power for GaN-Based LEDs by Treatments of Ar Plasma on p-GaN Surface

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
X. F. Zeng ◽  
S. C. Shei ◽  
H. M. Lo ◽  
S. J. Chang
Keyword(s):  
Contact Resistance ◽  
Plasma Treatment ◽  
Output Power ◽  
Current Injection ◽  
Injection Current ◽  
Reliability Test ◽  
Ar Plasma ◽  
Current Blocking ◽  
Initial Intensity

We successfully demonstrated that the Arplasmatreatment p-GaN surface increased the contact resistance of ITO/P-GaN serving as injection current deflection layer under the electrode pad. It was found that theVfvalues of the two LEDs at 20 mA were approximately 3.3 V. Under a 20 mA current injection, it was found that output powers of conventional LED and Ar-plasma-treatment LED on p-GaN surfaces were 9.8 and 11.08 mW, respectively. We can increase the output power of GaN LEDs in 13% due to current blocking on the surface of p-GaN under the electrode pad by inserting the treatment with Ar plasma. It was also found that, after the reliability test for 72 hours the half lifetimes of conventional LEDs and LEDs with Ar-plasma treatment on p-GaN surface were about 49% and 55%, corresponding to the initial intensity, respectively.

scholarly journals Effect of cold Ar plasma treatment on the catalytic performance of Pt/CeO2 in water-gas shift reaction (WGS)

2018 ◽  
Vol 225 ◽  
pp. 121-127 ◽  
Author(s):  
Laura Pastor-Pérez ◽  
Victor Belda-Alcázar ◽  
Carlo Marini ◽  
M. Mercedes Pastor-Blas ◽  
Antonio Sepúlveda-Escribano ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Catalytic Performance ◽  
Water Gas Shift ◽  
Water Gas Shift Reaction ◽  
Ar Plasma ◽  
Shift Reaction ◽  
Water Gas

Modification of thermally reduced graphene oxide by the SF6/Ar plasma treatment

2017 ◽  
Vol 8 (5) ◽  
pp. 763-768 ◽  
Author(s):  
E. P. Neustroev ◽  
M. V. Nogovitcyna ◽  
V. I. Popov ◽  
V. B. Timofeev
Keyword(s):  
Graphene Oxide ◽  
Plasma Treatment ◽  
Reduced Graphene Oxide ◽  
Reduced Graphene ◽  
Ar Plasma

Effects of Ar Plasma Treatment on Photoluminescence Properties of GaAs Nanowires

2019 ◽  
Vol 46 (2) ◽  
pp. 0211005
Author(s):  
高美 Gao Mei ◽  
李浩林 Li Haolin ◽  
王登魁 Wang Dengkui ◽  
王新伟 Wang Xinwei ◽  
方铉 Fang Xuan ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Photoluminescence Properties ◽  
Gaas Nanowires ◽  
Ar Plasma

Effect of Br gassing after Ar plasma treatment of polyolefins

2013 ◽  
Vol 27 (16) ◽  
pp. 1828-1839 ◽  
Author(s):  
Maalolan Ramanujam ◽  
Renate Mix ◽  
Manfred Wagner ◽  
Jörg F. Friedrich
Keyword(s):  
Plasma Treatment ◽  
Ar Plasma

How tantalum proceeds phase change on tantalum nitride underlayer with sequential Ar plasma treatment

2013 ◽  
Vol 137 (3) ◽  
pp. 689-693 ◽  
Author(s):  
Jung-Chih Tsao ◽  
Chuan-Pu Liu ◽  
Hsin-Chiao Fang ◽  
Ying-Lang Wang
Keyword(s):  
Phase Change ◽  
Plasma Treatment ◽  
Tantalum Nitride ◽  
Ar Plasma
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