Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope

2016 ◽  
Vol 16 (5) ◽  
pp. 4919-4923 ◽  
Author(s):  
Jong-Ho Bae ◽  
Jong-Ho Lee
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Subthreshold Slope ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate ◽  
Steep Subthreshold Slope

Dual Gate-Recess Structure of Metamorphic High-Electron-Mobility Transistors for Enhancing f[sub max]

2008 ◽  
Vol 155 (12) ◽  
pp. H987 ◽  
Author(s):  
Jung-Hun Oh ◽  
Min Han ◽  
Sung-Woon Moon ◽  
Seokhun Lee ◽  
In-Seok Hwang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate ◽  
Gate Recess

Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers

2006 ◽  
Vol 3 (3) ◽  
pp. 469-472
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Maruyama ◽  
T. Kosugi ◽  
T. Suemitsu ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate

AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

2005 ◽  
Vol 2 (7) ◽  
pp. 2623-2626 ◽  
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Kosugi ◽  
S. Sugitani ◽  
N. Shigekawa ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate

scholarly journals Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2795 ◽  
Author(s):  
Pin-Guang Chen ◽  
Kuan-Ting Chen ◽  
Ming Tang ◽  
Zheng-Ying Wang ◽  
Yu-Chen Chou ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
High Electron Mobility ◽  
Sensor Applications ◽  
Electron Mobility Transistors ◽  
Transition Effects ◽  
Steep Subthreshold Slope

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors.

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