Self-Boosted Tunnel Field-Effect Transistor Using Nitride Charge Trapping Layer for Low Supply Voltage Operation

2016 ◽  
Vol 16 (5) ◽  
pp. 5243-5246 ◽  
Author(s):  
Hyungjin Kim ◽  
Dae Woong Kwon ◽  
Min-Woo Kwon ◽  
Jungjin Park ◽  
Byung-Gook Park
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Supply Voltage ◽  
Charge Trapping ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Low Supply Voltage

Dual Metal Triple-gate-dielectric (DM_TGD) Tunnel Field Effect Transistor: A Novel Structure for Future Energy Efficient Device

2021 ◽  
Vol 14 ◽  
Author(s):  
Ajay Kumar Singh ◽  
Tan Chun Fui
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Supply Voltage ◽  
Effective Dielectric Constant ◽  
Drive Current ◽  
Effect Transistor ◽  
Ambipolar Current ◽  
Tunnel Field Effect Transistor ◽  
Dual Metal

Background: Power reduction is a severe design concern for submicron logic circuits, which can be achieved by scaling the supply voltage. Modern Field Effect Transistor (FET) circuits require at least 60 mV of gate voltage for a better current drive at room temperature. The tunnel Field Effect Transistor (TFET) is a leading future device due to its steep subthreshold swing (SS), making its ideal device at a low power supply. Steep switching TFET can extend the supply voltage scaling with improved energy efficiency for digital and analog applications. These devices suffer from a sizeable ambipolar current, which cannot be reduced using Dual Metal Gate (DMG) alone. Gate dielectric materials play a crucial role in suppressing the ambipolar current. Objective: This paper presents a new structure known as triple-gate-dielectric (DM_TGD) TFET, which combines the dielectric and work function engineering to solve these problems. Method: The proposed structure uses DMG with three dielectric gate materials titanium oxide (TiO2), aluminum oxide (Al2O3), and silicon dioxide (SiO2). The high dielectric material alone as gate oxide increases the fringing fields, which results in higher gate capacitance. This structure has been simulated using 2-D ATLAS simulator in terms of drive current (Ion), ambipolar current (Iamb) and transconductance (gm). Results: The device offers better gm, lower SS, lower leakage and larger drive currents due to weaker insulating barriers at the tunneling junction. Also, higher effective dielectric constant gives better gate coupling and lower trap density. Conclusion: The proposed structure suppresses the ambipolar current and enhance the drive current with reduced SCEs.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

scholarly journals A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Parameters ◽  
Cmos Integrated Circuits ◽  
Region Length ◽  
Internal Mechanism ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

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