Improved Reliability of InGaN-Based Light-Emitting Diodes by HfO2 Passivation Layer

2016 ◽  
Vol 16 (2) ◽  
pp. 1765-1767
Author(s):  
Seung Hyun Park ◽  
Yoon Seok Kim ◽  
Tae Hoon Kim ◽  
Sang Wan Ryu
Keyword(s):  
Light Emitting Diodes ◽  
Passivation Layer ◽  
Light Emitting

Enhancement of Barrier Properties Using Ultrathin Hybrid Passivation Layer for Organic Light Emitting Diodes

2006 ◽  
Vol 45 (7) ◽  
pp. 5970-5973 ◽  
Author(s):  
Sung Jin Bae ◽  
Joo Won Lee ◽  
Jung Soo Park ◽  
Dong Young Kim ◽  
Sung Woo Hwang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Barrier Properties ◽  
Passivation Layer ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light

scholarly journals Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes

2021 ◽  
Vol 11 (19) ◽  
pp. 9321
Author(s):  
Gun Hee Lee ◽  
Tran Viet Cuong ◽  
Dong Kyu Yeo ◽  
Hyunjin Cho ◽  
Beo Deul Ryu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Light Emitting Diodes ◽  
Hexagonal Boron Nitride ◽  
Operating Temperature ◽  
Passivation Layer ◽  
Light Emitting ◽  
Heat Dispersion ◽  
Current Characteristics ◽  
Dispersion Layer ◽  
Low Temperature Process

We introduce a low temperature process for coating InGaN/GaN light-emitting diodes (LEDs) with h-BN as a passivation layer. The effect of h-BN on device performance and reliability is investigated. At −5 V, the leakage current of the h-BN passivated LED was -1.15 x 10−9 A, which was one order lower than the reference LED’s leakage current of −1.09 × 10−8 A. The h-BN layer minimizes the leakage current characteristics and operating temperature by acting as a passivation and heat dispersion layer. With a reduced working temperature of 33 from 45 °C, the LED lifetime was extended 2.5 times following h-BN passivation. According to our findings, h-BN passivation significantly improves LED reliability.

High Efficiency Blue Light Emitting Diodes with Maskless Defects Passivation layer

2009 ◽  
Author(s):  
C. H. Wang ◽  
M. H. Lo ◽  
P. M. Tu ◽  
C. W. Hung ◽  
S. C. Hsu ◽  
...  
Keyword(s):  
Blue Light ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Passivation Layer ◽  
Light Emitting

scholarly journals Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al_2O_3 passivation layer

2014 ◽  
Vol 22 (S6) ◽  
pp. A1596 ◽  
Author(s):  
Zhi-Guo Yu ◽  
Li-Xia Zhao ◽  
Xue-Cheng Wei ◽  
Xue-Jiao Sun ◽  
Ping-Bo An ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Passivation Layer ◽  
Light Emitting
Sign in / Sign up

Export Citation Format

Share Document