Effects of Ta Addition Through Co-Sputtering on the Electrical Characteristics of Indium Tin Oxide Thin Film Transistors

2015 ◽  
Vol 15 (1) ◽  
pp. 386-390 ◽  
Author(s):  
Si-Nae Park ◽  
Dae-Ho Son ◽  
Shi-Joon Sung ◽  
Jin-Kyu Kang ◽  
Dae-Hwan Kim
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Characteristics

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

2016 ◽  
Vol 63 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Xin Xu ◽  
Letao Zhang ◽  
Yang Shao ◽  
Zheyuan Chen ◽  
Yong Le ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film

Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2012 ◽  
Vol 51 (6R) ◽  
pp. 061101 ◽  
Author(s):  
Jeong-Soo Lee ◽  
Yong-Jin Kim ◽  
Yong-Uk Lee ◽  
Yong-Hoon Kim ◽  
Jang-Yeon Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Solution Processed ◽  
Zinc Tin Oxide

In-plane-gate indium-tin-oxide thin-film transistors self-assembled on paper substrates

2011 ◽  
Vol 98 (11) ◽  
pp. 113507 ◽  
Author(s):  
Jie Jiang ◽  
Jia Sun ◽  
Wei Dou ◽  
Bin Zhou ◽  
Qing Wan
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Self Assembled ◽  
Paper Substrates

Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Zinc-Tin-Oxide Thin-Film Transistors

2014 ◽  
Vol 590 ◽  
pp. 229-233
Author(s):  
Sheng Po Chang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Subthreshold Slope ◽  
Partial Pressures ◽  
Zinc Tin Oxide ◽  
Effect Of Oxygen

We fabricated and studied the electrical characteristics of thin-film transistors with an amorphous zinc-tin–oxide (a-ZTO) channel, which was deposited by radio frequency magnetron co-sputtering under different oxygen partial pressures. The effect of varying the oxygen concentration on the electrical properties and device performance of the a-ZTO TFTs was investigated. A positive shift observed in the threshold voltage with increasing oxygen suggests that the number of oxygen vacancies in the a-ZTO film decreased. With an oxygen flow rate of 4 %, a threshold voltage of 2.25 V, an on-off current ratio of 2.1 × 103, and a subthreshold slope of 0.8 V·dec−1were obtained.

Sign in / Sign up

Export Citation Format

Share Document