Micromagnetics Simulation for Magnetization Switching of Permalloy Films with Pure Spin Current Injection

2012 ◽  
Vol 12 (11) ◽  
pp. 8662-8665 ◽  
Author(s):  
Syuta Honda ◽  
Hiroyoshi Itoh
Keyword(s):  
Spin Current ◽  
Current Injection ◽  
Pure Spin ◽  
Magnetization Switching

scholarly journals Magnetization switching of a perpendicular nanomagnet induced by vertical nonlocal injection of pure spin current

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Hirofumi Suto ◽  
Tazumi Nagasawa ◽  
Taro Kanao ◽  
Kenichiro Yamada ◽  
Koichi Mizushima
Keyword(s):  
Spin Injection ◽  
Spin Current ◽  
Pure Spin ◽  
Spin Torque ◽  
Device Structure ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Perpendicular Magnetization ◽  
Vertical Injection ◽  
Current Flows

AbstractInjection of pure spin current using a nonlocal geometry is a promising method for controlling magnetization in spintronic devices from the viewpoints of increasing freedom in device structure and avoiding problems related to charge current. Here, we report an experimental demonstration of magnetization switching of a perpendicular magnetic nanodot induced by vertical injection of pure spin current from a spin polarizer with perpendicular magnetization. In comparison with direct spin injection, the current amplitude required for magnetization switching is of the same order and shows smaller asymmetry between parallel-to-antiparallel and antiparallel-to-parallel switching. Simulation of spin accumulation reveals that, in the case of nonlocal spin injection, the spin torque is symmetric between the parallel and antiparallel configuration because current flows through only the spin polarizer, not the magnetic nanodot. This characteristic of nonlocal spin injection is the origin of the smaller asymmetry of the switching current and can be advantageous in spintronic applications.

PERFECT ALLOYS FOR SPIN HALL CURRENT-INDUCED MAGNETIZATION SWITCHING

SPIN ◽  
2012 ◽  
Vol 02 (02) ◽  
pp. 1250010 ◽  
Author(s):  
MARTIN GRADHAND ◽  
DMITRY V. FEDOROV ◽  
PETER ZAHN ◽  
INGRID MERTIG ◽  
YOSHICHIKA OTANI ◽  
...  
Keyword(s):  
Hall Effect ◽  
Noble Metals ◽  
Spin Diffusion ◽  
Spin Current ◽  
Material Design ◽  
Spin Hall Effect ◽  
Pure Spin ◽  
Magnetization Switching ◽  
Hall Angle ◽  
Electronic Measurement

We propose a device that allows for magnetization switching in nanomagnets by means of a pure spin current induced by the spin Hall effect. For this purpose we combine the ideas of magnetization switching of a ferromagnet by a spin current produced via the spin accumulation at a ferromagnet/nonmagnet interface with the electronic measurement of the direct spin Hall effect, and the theoretical material design to identify systems with a large spin Hall angle and an appropriate spin diffusion length. We will discuss the device design with respect to the size of the charge and spin currents. Based on ab initio calculations, we predict dilute alloys ideally suited for this application. Noble metals with single-sheeted Fermi surfaces, doped with either heavy impurities like Bi and Pb in Cu or Bi in Ag and light impurities like C and N in Au , seem to be the best candidates for a spin Hall angle larger than 5%.

scholarly journals Pure spin current injection in hydrogenated graphene structures

2017 ◽  
Vol 96 (19) ◽  
Author(s):  
Reinaldo Zapata-Peña ◽  
Bernardo S. Mendoza ◽  
Anatoli I. Shkrebtii
Keyword(s):  
Spin Current ◽  
Current Injection ◽  
Pure Spin ◽  
Hydrogenated Graphene ◽  
Graphene Structures

Pure spin-current-induced magnetization switching

2008 ◽  
Author(s):  
T. Yang ◽  
T. Kimura ◽  
J.-B. Laloë ◽  
Y. Otani
Keyword(s):  
Spin Current ◽  
Pure Spin ◽  
Magnetization Switching
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