Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions

2012 ◽  
Vol 12 (7) ◽  
pp. 5519-5522 ◽  
Author(s):  
S. Y. Kim ◽  
J. D. Song ◽  
I. K. Han ◽  
T. W. Kim
Keyword(s):  
Optical Properties ◽  
Growth Parameters ◽  
Quantum Structures ◽  
Structural And Optical Properties

Structural and optical properties of GaInNAs/GaAs quantum structures

2004 ◽  
Vol 16 (31) ◽  
pp. S3009-S3026 ◽  
Author(s):  
T Hakkarainen ◽  
J Toivonen ◽  
H Koskenvaara ◽  
M Sopanen ◽  
H Lipsanen
Keyword(s):  
Optical Properties ◽  
Quantum Structures ◽  
Structural And Optical Properties

Advances in the growth and characterization of Ge quantum dots and islands

2005 ◽  
Vol 20 (12) ◽  
pp. 3278-3293 ◽  
Author(s):  
J-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Spatial Distribution ◽  
Strain Distribution ◽  
Growth Parameters ◽  
Nucleation And Growth ◽  
Structural And Optical Properties ◽  
Ge Quantum Dots

We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.

Progress in the Growth and Characterization of Ge Quantum Dots and Islands

2004 ◽  
Vol 832 ◽  
Author(s):  
J.-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Spatial Distribution ◽  
Strain Distribution ◽  
Recent Progress ◽  
Growth Parameters ◽  
Nucleation And Growth ◽  
Structural And Optical Properties

ABSTRACTWe review progress in the growth of Si1-xGex islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si1-xGex coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si1-xGex islands and review recent progress in the determination of their composition and strain distribution. We discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands.

Structural and Optical Properties of PbTiO3 Grown on SrTiO3 Substrates by Peroxide MBE

2006 ◽  
Vol 966 ◽  
Author(s):  
Natalia Izyumskaya ◽  
Vitaliy Avrutin ◽  
Xing Gu ◽  
Umit Ozgur ◽  
Tae Dong Kang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Growth Parameters ◽  
Sol Gel ◽  
Random Access ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Epitaxial Relationship ◽  
High Quality

ABSTRACTLead titanate (PbTiO3), a ferroelectric material with perovskite structure, has received a great deal of attention owing to a unique combination of its piezoelectric, pyroelectric, dielectric, electo- and acousto-optic properties [1–3]. PbTiO3 is a very attractive material for the use in a wide variety of fields, including ultrasonic sensors, infrared detectors, electro-optic modulators, and ferroelectric random access memories. To harness the intrinsic properties of PbTiO3 for device applications, however, high-quality epitaxial films are required. PbTiO3 thin films have been prepared by various methods such as chemical vapor deposition, rf magnetron sputtering, pulsed laser deposition, hydrothermal method, and sol-gel technique. Surprisingly, molecular beam epitaxy (MBE), with its precise control over composition, has not been widely applied, except of a few reports on MBE growth with the use of ozone as an oxidizing agent [4]. In the present work, high-quality single-crystal PbTiO3 layers were grown on (001) SrTiO3 substrates by MBE with the use of hydrogen peroxide as an oxidant [5]. Phase composition as well as structural and optical properties of the films were examined as a function of growth parameters by high-resolution x-ray diffractometry, spectroscopic ellipsometry, and photoluminescence. It was found that single-phase PbTiO3 films grew epitaxially at substrate temperatures above 600°C, whereas layers grown at lower temperature contained lead oxide inclusions. All the PbTiO3 layers were c-axis oriented with the epitaxial relationship PbTiO3(100)//SrTiO3(100) and PbTiO3[001]//SrTiO3[001]. No evidence of a-domains was found. Full width at half maximum of (001) rocking curves for 50–60 nm thick PbTiO3 layers are as low as 6–8 arcmin, indicating their good crystal quality. Pseudodielectric function of PbTiO3 was measured using variable angle spectroscopic ellipsometry at room temperature. Refractive index was found to be 2.605 at 633 nm (1.96 eV), which is consistent with the literature data. With the help of the standard critical point (SCP) lineshape analysis the band gap energy was calculated to be (3.778±0.005) eV.

Impact of In content on the structural and optical properties of (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Patrick Waltereit ◽  
James S. Speck
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Biaxial Tension ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties ◽  
Piezoelectric Polarization

AbstractWe have studied the structural and optical properties of a series of (In,Ga)/GaN multiple quantum wells with identical thicknesses but varied In content grown by plasma-assisted molecular beam epitaxy. Careful choice of the growth parameters returns samples with smooth and abrupt interfaces. The shift of the photoluminescence transition energy with externally applied biaxial tension was investigated. We observed a red-shift for small In contents while a blue-shift was detected for higher In contents. This result is in qualitative agreement with band profile calculations taking into account both the band gap deformation potentials and the piezoelectric polarization in these structures. However, the magnitude of the shift is well in excess of the calculated one. We attribute this finding to a substantial deviation of the piezoelectric constants from those calculated for unstrained material. Finally, we estimate the piezoelectric polarization of InGaN/GaN for linear and non-linear terms in strain.

Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns

2017 ◽  
Vol 255 (5) ◽  
pp. 1700481
Author(s):  
Takao Oto ◽  
Yutaro Mizuno ◽  
Jun Yoshida ◽  
Ai Yanagihara ◽  
Rin Miyagawa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Structures ◽  
Structural And Optical Properties

Influence of MOVPE growth parameters on the structural and optical properties of GaAs on Si(100)

1988 ◽  
Vol 93 (1-4) ◽  
pp. 487-493 ◽  
Author(s):  
A. Freundlich ◽  
J.C. Grenet ◽  
G. Neu ◽  
A. Leycuras ◽  
C. Vèrié ◽  
...  
Keyword(s):  
Optical Properties ◽  
Growth Parameters ◽  
Structural And Optical Properties ◽  
Gaas On Si ◽  
Movpe Growth
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